2SB1215T-TL-H Allicdata Electronics
Allicdata Part #:

2SB1215T-TL-H-ND

Manufacturer Part#:

2SB1215T-TL-H

Price: $ 0.36
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 100V 3A TP-FA
More Detail: Bipolar (BJT) Transistor PNP 100V 3A 130MHz 1W Sur...
DataSheet: 2SB1215T-TL-H datasheet2SB1215T-TL-H Datasheet/PDF
Quantity: 1000
700 +: $ 0.32453
Stock 1000Can Ship Immediately
$ 0.36
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Power - Max: 1W
Frequency - Transition: 130MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: 2-TP-FA
Base Part Number: 2SB1215
Description

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A 2SB1215T-TL-H is a single PNP bipolar junction transistor (BJT). It is typically used across electronic components and circuits for these main areas: switching, amplifying, and signal rectifying. It is a semiconductor device with three leads connected to an emitter, collector, and base. It can amplify current, as well as control current flow, and are also used for switching.

This 2SB1215T-TL-H transistor has an effective current amplification factor (hFE) of between 50 and 120. It operates with a power dissipation (PD) of 1W and can handle a maximum collector-emitter voltage of 30V. The collector–emitter capacitance of this transistor is 8pF, and the base-collector capacitance is 1pF. They have a maximum operating temperature of 150°C and a storage temperature range of -65°C to +150°C. This model is formed in a TO-92 package that can be soldered easily.

A bipolar junction transistor (BJT) is a current-controlled three-terminal device, usually consisting of two p-type and one n-type semiconductor layers. It can be used for a variety of power and analog applications, with the most common application being switching and amplification. When using a BJT transistor, it is important to understand its basics, such as how to identify the leads and how to connect the transistor correctly in a circuit.
The 2SB1215T-TL-H is a PNP transistor, with its collector being the most positive voltage within the circuit. The collector is also the output, with the base as the input, and the emitter as the most negative voltage. When a forward bias is applied to the base-emitter junction, current flows and amplifies. This movement of current changes the behavior of the collector-emitter flow, allowing the control of current to the collector. This allows a BJT to be used as an amplifier or switch.

The working principle of the 2SB1215T-TL-H transistor is based on the concept of electron mobility. Electrons are free to move in materials allowing them to flow through a transistor. When current is applied to the base, electrons will be added to the layer, allowing the collector current to increase. The collector current then determines the collector-emitter current, depending on how much current is supplied to the base.

In conclusion, the 2SB1215T-TL-H is a traditional single PNP bipolar junction transistor. It is commonly used for power and analog applications, such as switching and amplification. Its main application fields in electronics are switching, amplifying, and signal rectifying. The computer\'s operation is based on the concept of electron mobility, where current is added to the base and then determines the collector-emitter current. This enables the use of the 2SB1215T-TL-H transistor for amplification or switching.

The specific data is subject to PDF, and the above content is for reference

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