2SB1215S-E Allicdata Electronics
Allicdata Part #:

2SB1215S-E-ND

Manufacturer Part#:

2SB1215S-E

Price: $ 0.69
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 100V 3A TP
More Detail: Bipolar (BJT) Transistor PNP 100V 3A 130MHz 1W Thr...
DataSheet: 2SB1215S-E datasheet2SB1215S-E Datasheet/PDF
Quantity: 1000
1 +: $ 0.63000
10 +: $ 0.56511
100 +: $ 0.44043
500 +: $ 0.36386
1000 +: $ 0.28726
Stock 1000Can Ship Immediately
$ 0.69
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Power - Max: 1W
Frequency - Transition: 130MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TP
Base Part Number: 2SB1215
Description

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2SB1215S-E transistors are of the single bipolar junction transistor (BJT) variety. This type of transistor is used for many purposes and can be found in a wide range of electronic devices and circuits. These transistors can be used in logic, amplification, switching and even radio-frequency (RF) applications. In this article, we will look at the application field and working principle of the 2SB1215S-E transistor.

The most common application of the 2SB1215S-E transistor is as an amplifier. In this role, it can be used to increase the power output of a signal. This type of amplification is known as linear amplification and it is often used in audio applications. The 2SB1215S-E transistor is also popular in RF applications, where it is used as a switch to control the gain of an RF signal.

The construction of the 2SB1215S-E transistor consists of two p-type layers and one n-type layer. This arrangement is known as an NPN transistor, which is the most common type of transistor. The 2SB1215S-E transistor has a voltage gain of approximately 200 and can handle up to 1A of current. This makes it a very versatile transistor and allows it to be used in a wide range of applications.

When it comes to the working principle of the 2SB1215S-E transistor, it is important to understand how it operates and how it produces current. When a voltage is applied to the base of the transistor, it will start to conduct current through the collector and emitter. This current is then amplified and sent out of the emitter. The voltage gain of the 2SB1215S-E transistor is determined by its base-emitter voltage and its collector-emitter saturation current. This makes it an ideal transistor for linear amplification.

The 2SB1215S-E transistor is an extremely versatile component and is used in many different applications. It is important to understand the application field and working principle of the 2SB1215S-E transistor before attempting to use it in any circuit. This will help to ensure that it is used in the correct way, and that it produces the desired results.

The specific data is subject to PDF, and the above content is for reference

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