| Allicdata Part #: | 2SB1240TV2R-ND |
| Manufacturer Part#: |
2SB1240TV2R |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | TRANS PNP 32V 2A ATV |
| More Detail: | Bipolar (BJT) Transistor PNP 32V 2A 100MHz 1W Thro... |
| DataSheet: | 2SB1240TV2R Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tape & Box (TB) |
| Part Status: | Obsolete |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 2A |
| Voltage - Collector Emitter Breakdown (Max): | 32V |
| Vce Saturation (Max) @ Ib, Ic: | 800mV @ 200mA, 2A |
| Current - Collector Cutoff (Max): | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 180 @ 500mA, 3V |
| Power - Max: | 1W |
| Frequency - Transition: | 100MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | 3-SIP |
| Supplier Device Package: | ATV |
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A transistor is an essential component in almost all electronics, and the 2SB1240TV2R is no exception. As a single bipolar junction transistor (BJT), this device offers a wide range of applications and working principles.
The 2SB1240TV2R is primarily used as an amplifier in audio circuits, where it can provide gain up to 115dB. The device has a collector-emitter voltage (Vce) of 80V and a maximum current gain (hfe) of 132 at a collector current of 1mA. It is suitable for use in medium power audio applications.
Additionally, this transistor can be used in low voltage switch circuits, where it can provide substantial amounts of switching power. It has a high on current rating of 0.9A, making it suitable for driving small solenoids and relays. In switching applications, the device can also accept a wide range of input signals, allowing for versatile circuit control.
The 2SB1240TV2R has its own unique working principle. It is constructed from three layers of semiconducting material: a base region, an emitter region, and a collector region. When current is applied to the base region, the emitter-base junction is forward biased, allowing current to flow between the emitter and collector regions. This principle is known as bipolar activation, and it is the basis of all BJT transistors.
The 2SB1240TV2R is also a popular choice for radio frequency (RF) applications, such as antenna tuning and amplifier circuits. The device can handle frequencies up to 500MHz and has a low reverse transfer capacitance of 1.2pF, allowing for efficient signal transmission across these frequencies. In addition, it has an excellent power gain of 7.9dB for weak to medium strength signals.
The 2SB1240TV2R single bipolar junction transistor is an essential component in a wide range of audio, radio frequency, and switch circuits. Its ability to switch a high current and provide considerable amounts of current gain makes it a reliable device for any design. Additionally, its simple working principle makes it easy to integrate into most circuits.
The specific data is subject to PDF, and the above content is for reference
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2SB1240TV2R Datasheet/PDF