Allicdata Part #: | 2SB1386T100RTR-ND |
Manufacturer Part#: |
2SB1386T100R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PNP 20V 5A SOT-89 |
More Detail: | Bipolar (BJT) Transistor PNP 20V 5A 120MHz 2W Surf... |
DataSheet: | 2SB1386T100R Datasheet/PDF |
Quantity: | 3000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 100mA, 4A |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 180 @ 500mA, 2V |
Power - Max: | 2W |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | MPT3 |
Base Part Number: | 2SB1386 |
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The 2SB1386T100R is a bipolar transistor that belongs to the single set of transistors. It belongs to the family of NPN transistors and it has different applications that it can be used for. It also has a distinct working principle; in this article, these two topics will be discussed further.
Application Field
The 2SB1386T100R is a general-purpose transistor with a current gain of 150 and a voltage rating of 30V. It is ideal for use in low-frequency amplifiers and driver circuits for various electronic devices. It can be used in audio amplifiers, switching regulators, car speakers, and other audio circuits. Additionally, its special feature is that it can be designed to emit very low harmonic levels, making it suitable for use in ultra-high-fidelity audio systems.
It is also suitable for use in low-noise circuits such as computers, televisions, and portable audio devices. Its small size also makes it an ideal choice for miniature audio devices such as hearing aids, pagers, and other applications where space is limited. Additionally, its high-frequency characteristics make it suitable for use in high-frequency oscillators and digital integrated circuits.
Working Principle
The 2SB1386T100R is a more advanced type of bipolar transistor. It is made up of three terminal regions referred to as the collector, the base, and the emitter. The collector and the emitter are responsible for the output current, while the base is responsible for controlling the amount of current flowing from the collector to the emitter. When a voltage is applied to the base, current flows from the collector to the emitter and the transistor amplifies the signal.
When the base-emitter voltage is above the threshold voltage, the transistor is in a saturation state and the collector-emitter current is determined by the external circuit. When the lower base-emitter junction is reverse biased the device is in the cut-off region and there is no collector-emitter current. Thus, the current gain of the 2SB1386T100R is determined by the ratio of the collector-emitter current to the base current. Generally, the current gain is between 200 and 450.
In conclusion, the 2SB1386T100R is a bipolar transistor with a wide range of applications and a working principle based on the three terminal regions – the collector, the base, and the emitter. It is used in many electronic devices, ranging from low-frequency amplifiers to high-frequency oscillators and digital integrated circuits. Its working principle is based on the ratio of the current flowing from the collector to the emitter to the current flow from the base.
The specific data is subject to PDF, and the above content is for reference
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