2SB1184TLR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
Transistor Type:	PNP
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	1V @ 200mA, 2A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	180 @ 500mA, 3V
Power - Max:	1W
Frequency - Transition:	70MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	CPT3
Base Part Number:	2SB1184

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Introduction

2SB1184TLR is a single bipolar junction transistor (BJT). In electronic engineering and semiconductor science, a BJT is a type of current controlling device in which the current flow is controlled by current-controlled current sources. They are composed of two doped semiconductor layers, usually a p-n-p or n-p-n, which form two p-n junctions with each other. BJTs can be used as an amplifier or a switch, and are commonly found in everyday electronics such as cell phones, audio amplifiers and radio receivers.

Application Field

2SB1184TLR can be largely used in a variety of applications. They can act as amplifiers and as switches and can be used in a range of consumer electronics products. They are used in low power audio amplifiers, pulse shaping circuits and other signal processing circuits. They are also used in consumer electronic products such as television receivers, computers and portable radios. In addition to consumer applications, 2SB1184TLR finds use in industrial applications. It can be used in amplifiers, oscillators, voltage regulators and other control circuits. They can also be used in power supply circuits in computer motherboards and in power switching applications.

Working Principle

A 2SB1184TLR is an NPN bipolar transistor. This type of transistor consists of two doped semiconductor layers, an emitter layer, a base layer and a collector layer. The emitter layer, in this case N-type, is connected to the base while the base layer, which is typically P-type, is connected to the collector. The transistor works by creating a small electric field between the emitter, base and collector. This electric field can be used to regulate the current flow between the emitter, base and collector.When a voltage is applied to the emitter and the base layer, a small amount of electrons are injected into the base, allowing them to flow through the emitter–base junction. This is known as forward-bias. When the voltage in the base is lower than the voltage in the emitter, the junction is reversed-biased and current can only flow from the collector to the base. This controls the current flow from the collector and into the base, allowing the transistor to act as an amplifier or switch.

Conclusion

2SB1184TLR is a single bipolar junction transistor that can be used to control current flow. It can act as an amplifier or a switch and is commonly found in everyday electronics such as cell phones, audio amplifiers, television receivers and portable radios. In addition to consumer applications, 2SB1184TLR finds great use in industrial applications such as amplifiers, oscillators, voltage regulators and other control circuits. Although there are other types of transistors available, 2SB1184TLR proved to be a popular choice due to its versatile nature and wide usage in everyday electronic products.

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