2SB1412TLQ Allicdata Electronics
Allicdata Part #:

2SB1412TLQTR-ND

Manufacturer Part#:

2SB1412TLQ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PNP 20V 5A SOT-428
More Detail: Bipolar (BJT) Transistor PNP 20V 5A 120MHz 1W Surf...
DataSheet: 2SB1412TLQ datasheet2SB1412TLQ Datasheet/PDF
Quantity: 2500
Stock 2500Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 4A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: CPT3
Base Part Number: 2SB1412
Description

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The 2SB1412TLQ is a high-performance NPN silicon bipolar transistor. It offers a variety of features and advantages, such as low-power consumption and high-polarization gain. The 2SB1412TLQ is commonly used in a variety of applications, such as switching, high-speed operation, and low-voltage operation. It can also be used for amplifying low frequency signals.

The 2SB1412TLQ is a small signal NPN transistor that is designed for a variety of applications. It is designed to serve as a switching device, capable of handling higher amounts of current than normal small signal transistors. The transistor’s collector-emitter voltage is limited to 4V, making it suitable for applications where low voltage levels are required. The transistor’s gain is typically in the range of 40-100, which is suitable for powering small current loads.

The 2SB1412TLQ works by controlling the amount of current going through it. Its collector is connected to the positive voltage rail and the emitter is connected to the negative voltage rail. A voltage applied to the base of the transistor controls the current flowing through it. When the base voltage is low, the base-emitter junction is reverse biased and the transistor is off. When the base voltage is increased, the base-emitter junction becomes forward biased and the transistor turns on. This allows the collector current to flow and the transistor to operate as a switch.

The 2SB1412TLQ is designed for applications that require excellent high-contact characteristics. This makes it well suited for use in sensing and controlling circuits, such as logic circuits and audio applications. The transistor also has unmatched high-fidelity performance when used in matching circuits. The 2SB1412TLQ is also suitable for use in power switching applications, such as DC-to-DC converters and DC motor control circuits.

Due to its low voltage and current requirements, the 2SB1412TLQ is ideal for use in low-power applications. The transistor is commonly used in embedded systems and consumer electronics. The 2SB1412TLQ also has an impressive breakdown voltage of 80V, making it suitable for a range of applications that require very high numbers of cycles.

In conclusion, the 2SB1412TLQ is a versatile and reliable NPN silicon bipolar transistor that is suitable for a wide range of applications. It has a range of features and advantages, such as low-power consumption, high-polarization gain, high-contact characteristics, and unmatched high-fidelity performance. The transistor is capable of handling higher currents than typical small signal transistors and it is also suitable for a variety of low-power applications.

The specific data is subject to PDF, and the above content is for reference

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