2SB1216T-H

Series:	--
Packaging:	Bulk
Part Status:	Last Time Buy
Transistor Type:	PNP
Current - Collector (Ic) (Max):	4A
Voltage - Collector Emitter Breakdown (Max):	100V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 200mA, 2A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 500mA, 5V
Power - Max:	1W
Frequency - Transition:	130MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	TP
Base Part Number:	2SB1216

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The 2SB1216T-H is a single bipolar transistor that is well-suited for many commercial and industrial applications. This long-lasting and highly reliable device is available in both through-hole and surface mount packages. This transistor is widely used in various RF and microwave applications, owing to its excellent frequency response characteristics.The 2SB1216T-H is a silicon bipolar junction transistor (BJT), and it is designed for use in high-frequency switching, amplifier and oscillator circuits. The device is available in leaded, hermetically sealed TO-92 and surface mount packages. The device operates at up to 200V and has a maximum power dissipation of 300mW. It has a maximum collector current of 0.8A and a gain of 950 at 1MHz.The 2SB1216T-H is designed for use in high-frequency switching and amplifier/oscillator circuits. It exhibits excellent frequency response in both the linear and non-linear modes. This makes it suitable for use in both modulation amplifiers and oscillators. Its low current consumption and low noise level also make it ideal for use in low-noise amplifier designs.The 2SB1216T-H employs the usual common-emitter configuration. This common-emitter transistor has an Input/Output (I/O) impedance ratio of 1.25:1, which allows it to be used as an impedance converter. The collector-emitter saturation voltage (VCE(Sat)) is low, which increases its gain for small signal processing applications.In terms of applications, the 2SB1216T-H is suitable for use in RF and microwave circuits, as well as in low-noise amplifier designs. Its excellent frequency response also make it suitable for use in modulation amplifiers and oscillators. The device can also be used as an impedance converter in many circuits.The 2SB1216T-H is a reliable, long-lasting and highly cost-effective solution for many commercial and industrial applications in the RF and microwave markets. Its various advantages, such as the I/O impedance ratio and lowVCE(Sat) make it well-suited for many applications. It is also available in hermetically sealed and surface mount packages, which allow for easy assembly.

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