| Allicdata Part #: | 2SB1201S-TL-EOSTR-ND |
| Manufacturer Part#: |
2SB1201S-TL-E |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS PNP 50V 2A TP-FA |
| More Detail: | Bipolar (BJT) Transistor PNP 50V 2A 150MHz 800mW S... |
| DataSheet: |  2SB1201S-TL-E Datasheet/PDF |
| Quantity: | 2800 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP |
| Current - Collector (Ic) (Max): | 2A |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 700mV @ 50mA, 1A |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 2V |
| Power - Max: | 800mW |
| Frequency - Transition: | 150MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | 2-TP-FA |
| Base Part Number: | 2SB1201 |
Description
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2SB1201S-TL-E is a high-performance NPN Bipolar PNP Darlington Transistor and is part of the Bipolar Transistors - Single category. It is typically used in applications such as amplifiers, signal processing, switching, and other general-purpose applications.
2SB1201S-TL-E has a collector-base voltage (Vcb) of 50V and a collector current (Ic) of 1A with a power rating of 1.2W. It also has a high breakdown voltage, low noise, fast switching speed and high gain. The package is molded in plastic and has a pin connection configuration.
The working principle of 2SB1201S-TL-E is based on the basic BJT Theory. A BJT is a current-controlled device, which means that the base current controls the emitter current. The emitter current is the current which flows through the device when it is turned ‘on’. The base current is the current which flows through the device when it is turned ‘off’. In other words, 2SB1201S-TL-E works by allowing a small amount of base current to pass through the device in order to control the amount of current flowing through the emitter. Additionally, the collector current is equal to the emitter current multiplied by the device’s beta ( β ).
2SB1201S-TL-E can be applied to various types of applications including amplifier circuits, signal switching, signal processing, and other general-purpose applications. It can be used for amplifier circuits because it has a high gain, a low noise, and a fast switching speed. In addition, it can also be used for signal switching applications due to its wide operating temperature range, which makes it suitable for demanding temperature and electrical requirements. Finally, it can also be used for signal processing applications because of its low power consumption and its capability to amplify signals from differential inputs to single-ended and/or substitute output signals.
2SB1201S-TL-E is a high-performance NPN Bipolar PNP Darlington Transistor that can be used in amplifiers, signal switching, signal processing, and other general-purpose applications. It is a current-controlled device with a collector-base voltage of 50V, a collector current of 1A, and a power rating of 1.2W. It also has a high breakdown voltage, low noise, fast switching speed, and high gain. Additionally, it has a wide operating temperature range which makes it suitable for demanding temperature and electrical requirements. In conclusion, 2SB1201S-TL-E is an excellent choice for a wide variety of applications due to its many features and benefits.
The specific data is subject to PDF, and the above content is for reference
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