Allicdata Part #: | 2SB1203T-E-ND |
Manufacturer Part#: |
2SB1203T-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 50V 5A TP |
More Detail: | Bipolar (BJT) Transistor PNP 50V 5A 130MHz 1W Thro... |
DataSheet: | 2SB1203T-E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 550mV @ 150mA, 3A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 500mA, 2V |
Power - Max: | 1W |
Frequency - Transition: | 130MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TP |
Base Part Number: | 2SB1203 |
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The 2SB1203T-E is a PNP silicon version of a bipolar transistor designed to be used in a wide range of applications. It is a small-signal switching and amplifier transistor. 2SB1203T-E is commonly used in consumer electronic devices, audio equipment, automotive circuits, and industrial applications. It belongs to the single bipolar junction transistors (BJTs) category, which are semiconductor devices offering gain and enabling current to flow in two directions.
The 2SB1203T-E works by using the behavior of charge carriers (majority carriers) using its base-emitter junction. When the base-emitter junction is in saturation, the transistor is said to be on and will not pass current; when the base-emitter junction is in cut-off, it will not pass current. This action depends on the amount of current that flows into the base to turn the transistor on and off. This is known as switching on and off.
When the base-emitter junction is on, the transistor allows a large amount of current to flow from the collector to the emitter, a process known as amplification. The collector current is controlled by the amount of base current and is known as the gain. The gain of the transistor is the ratio between the collector and base current, and it determines the level of amplification. The higher the gain, the greater the amplification.
Furthermore, the 2SB1203T-E can be used for a range of other applications such as signal processing and matching of electronic components. The transistor is capable of acting as an amplifier and a switch, allowing current to be switched from one terminal to another. This makes it ideal for use in regulating the voltage and current in a circuit. It is also used in many audio applications such as amplifying signals, controlling volume, and adjusting the tone of a signal.
The 2SB1203T-E also has a wide range of other features that make it a popular choice for various applications. It is a low-noise device, meaning it does not add any unwanted noise to an electronic circuit. It is also capable of achieving high switching speeds, making it suitable for high-frequency applications. It is an efficient device, allowing for very low power consumption.
2SB1203T-E transistors are also very reliable and its relatively low cost makes it a good choice for many applications. The device is available in a variety of package options, which make it suitable for various applications. It is also capable of operating at high temperatures, which makes it suitable for use in extreme environment conditions.
The 2SB1203T-E is an excellent choice for a wide range of applications. It is a small-signal transistor capable of switching, amplifying, and matching signals. It is able to achieve high switching speeds and a low noise level, making it suitable for many audio applications. Furthermore, its efficiency, reliability and low cost make it a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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