2SB1205T-E Allicdata Electronics
Allicdata Part #:

2SB1205T-E-ND

Manufacturer Part#:

2SB1205T-E

Price: $ 0.48
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 20V 5A TP
More Detail: Bipolar (BJT) Transistor PNP 20V 5A 320MHz 1W Thro...
DataSheet: 2SB1205T-E datasheet2SB1205T-E Datasheet/PDF
Quantity: 1000
1 +: $ 0.42840
10 +: $ 0.37926
100 +: $ 0.29068
500 +: $ 0.22981
1000 +: $ 0.18385
Stock 1000Can Ship Immediately
$ 0.48
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 320MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TP
Base Part Number: 2SB1205
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Bipolar junction transistors (BJT) are semiconductor devices used in many electronic applications. They are composed of two diodes connected together to form a three-terminal device. The most common type of BJT is the single junction transistor, also known as 2SB1205T-E. This article will discuss the application field and working principle of 2SB1205T-E.

2SB1205T-E is mainly used for high-frequency high-power applications in the fields of communications and industrial electronic products. It is used in many applications like radio broadcasting, microwave radio communication and TV transmitters. In addition, 2SB1205T-E can also be used in switching and power control of various electronic devices.

2SB1205T-E consists of three layers of semiconductor material. The layers are collector, base, and emitter. The base is the middle layer between the collector and emitter. The edges of the base and emitter form the PN junction. The layers of the 2SB1205T-E are connected in such a way that by applying suitable voltage to the base terminal, a current can be controlled through the collector and emitter terminals.

The basic working principle of 2SB1205T-E is that when the base-emitter junction is forward-biased, electrons are able to cross this junction and when the collector-base junction is reverse-biased, electrons are blocked from crossing this junction. By controlling the current and voltage applied to the base, a current can be allowed or blocked through the collector and emitter terminals, thus allowing the device to be used as an amplifier or logic switch.

2SB1205T-E can be used to control signals with high frequencies and powers. As it is a high current device and it has a high voltage withstand capability of 250V, it can be used in harsh environments and for high power applications. In addition, 2SB1205T-E can be used in switching, controlling, amplifying and power management applications.

2SB1205T-E is an important device for many electronic applications. Its application field and working principle are essential for understanding its uses. As such, it is important to familiarize oneself with the details of this device to ensure its successful and optimal use.

The specific data is subject to PDF, and the above content is for reference

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