2SB1216S-E Allicdata Electronics
Allicdata Part #:

2SB1216S-E-ND

Manufacturer Part#:

2SB1216S-E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 100V 4A TP
More Detail: Bipolar (BJT) Transistor PNP 100V 4A 130MHz 1W Thr...
DataSheet: 2SB1216S-E datasheet2SB1216S-E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Power - Max: 1W
Frequency - Transition: 130MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TP
Base Part Number: 2SB1216
Description

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A 2SB1216S-E transistor is one type of bipolar single-transistor, which is a three-terminal semiconductor device that holds its own against other types of transistors. It is a combination of two FET (Field Effect Transistor) transistors and a bipolar junction transistor, and acts as a useful switching circuit element, capable of amplifying current. The 2SB1216S-E has a low noise capability, high breakdown voltage and good thermal conductivity characteristics making it ideally suited for switching and/or amplifier applications.

2SB1216S-E transistor is typically used in power control applications such as motor speed control, electric vehicle applications, power supply control and regulated power supplies in various electronic circuits. It is also suitable for start-stop motor control, temperature control, motor switching, and in small signal amplification. The basic configuration is typically NPN, meaning the emitter is always negative with respect to the base and collector.

The 2SB1216S-E transistor relies on the principle of "field effect" to work. The principle of field effect transistors is to control the current flow from the transistor\'s substrate (base) to its collector by manipulating the amount of electric field that is induced across the substrate, allowing the transistor to function as an amplifier. When electric current flows from the base to the collector, it creates an electric field and charges the substrate, which attracts the collector current and allows the transistor to be used as an amplifier. The base current is usually controlled by a resistor, and the current will not be affected by varying the base-collector voltage.

The 2SB1216S-E transistor is a popularly used field effect transistor, often used in applications like electronic controllers, logic gates, solid state relays and power amplifiers. Its superior switching characteristics are very beneficial in applications where high speed or fast switches are needed. The 2SB1216S-E is often used as an amplifier or linear regulator, as it is easy to use and has a good amount of current gain. Due to its low noise characteristic, the 2SB1216S-E is better suited for switching applications, as it is less prone to producing significant noise.

As the 2SB1216S-E transistor is a low power device, it is suitable to be used in small circuits where power consumption is at a premium. Its small size makes it ideally suited for areas where space is limited. Additionally, its wide operating temperature range gives it the ability to be used in environments where temperatures vary widely.

The 2SB1216S-E is a versatile field effect transistor, ideal for applications that require a switch, amplifier, or linear regulator. Its wide operating temperature range and low-noise characteristics make it a great choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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