Allicdata Part #: | 2SB1216T-E-ND |
Manufacturer Part#: |
2SB1216T-E |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 100V 4A TP |
More Detail: | Bipolar (BJT) Transistor PNP 100V 4A 130MHz 1W Thr... |
DataSheet: | 2SB1216T-E Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.22097 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Last Time Buy |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 4A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 500mA, 5V |
Power - Max: | 1W |
Frequency - Transition: | 130MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TP |
Base Part Number: | 2SB1216 |
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.The 2SB1216T-E is a single type of bipolar junction transistors (BJT). This type of transistor is generally used in electronic designs to amplify electronic signals, or to switch electronic signals on and off. It is a good choice for applications that require high switching speed and low on-state resistance.
2SB1216T-E is a low-cost, general purpose, NPN transistor. It is mainly used in switching and amplification applications. It can be used for various functions ranging from being part of analog circuits such as amplifiers, preamplifiers and audio amplifiers to digital applications such as inverters and logic gates. In addition to its low cost, it is also easier to incorporate into a printed circuit board design due to its single package type.
The 2SB1216T-E has three main electrical terminals: the emitter (E), the base (B) and the collector (C). A base current IB determines the amount of current IC flowing between the collector and emitter, which depends on the current gains, or hFE. When the base is driven by an external current, the collector current flows from collector to emitter as long as VCE is greater than the breakdown voltage VCES.
In addition to its switching and amplification applications, this transistor is also used to build a Darlington pair. A Darlington pair is a combination of two bipolar transistors which acts like a single transistor with the advantage of much higher current amplification. This is useful in applications where large amounts of current must be supplied, such as in higher power audio amplifiers.
The 2SB1216T-E is capable of operating at a maximum voltage of 30V, a maximum collector current of 800mA, a maximum dissipation of 535mW and a frequency band of up to 400MHz. Each of these parameters needs to be taken into consideration when designing a circuit using this transistor so that it can operate within its specified operating limits.
The main advantage of using the 2SB1216T-E over other types of transistors is its versatility. It is capable of being used in a variety of applications, including but not limited to amplifiers, logic gates, high power audio amplifiers, and Darlington pairs. This makes it a great choice for designers looking for an all-in-one transistor solution, as it does not require the design engineer to buy and use several different types of transistors.
In conclusion, the 2SB1216T-E is a single type of bipolar junction transistor that is widely used for a variety of electronic applications due to its low cost, high switching speed, and low on-state resistance. It can be used for amplifiers, logic gates, Darlington pairs, and higher power audio amplifiers. Its versatility and ease of integration into a circuit make it a great choice for design engineers who are looking for an all-in-one transistor solution.
The specific data is subject to PDF, and the above content is for reference
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