2SB1237TV2R

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	32V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	180 @ 100mA, 3V
Power - Max:	1W
Frequency - Transition:	150MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	3-SIP
Supplier Device Package:	ATV

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The 2SB1237TV2R is a bipolar (BJT) single transistor designed for applications such as automatic copying, speed controllers and various switching circuits. It features a low saturation voltage and a high gain-bandwidth product. This type of transistor is usually used in high-frequency circuits that require temperature stability, fast switching and high gain.

Characteristics

The 2SB1237TV2R has a low collector emitter saturation voltage (VCEsat) of 0.2V, a high collector power dissipation of 0.5W, and a high gain-bandwidth product of 15MHz. It also has an excellent thermal resistance with a total power dissipation of 1.5W and a collector pinch-off voltage of -0.3V. The total power dissipation of this single transistor is 2W, making it suitable for use in high-frequency circuits with a high current requirement.

Application Field

The 2SB1237TV2R is most suitable for automatic copying, speed controllers, and various electronic switch circuits. It can be used for very high frequency switching between two circuits, such as in communication systems or to control various other electronic circuits. Additionally, the 2SB1237TV2R is suitable for power switching in high frequency circuit applications that require low saturation voltage, high speed, and a high gain-bandwidth product. It is well suited for electronic switching applications in various power equipment or audio systems.

Working Principle

The 2SB1237TV2R works on the principle of bipolar junction transistors (BJT), a voltage-controlled device which allows current to flow between two points, the collectors and the emitter. The amount of current that flows through the device is controlled by the base voltage. The base-to-collector junction of the transistor acts as a diode, allowing electrons to pass from the collector to the emitter while also restricting the flow of electrons from the emitter to the collector. This results in a potential difference between the two points, which determines the current flow through the transistor. The 2SB1237TV2R is designed to operate at high frequencies and low saturation voltages, which make it ideal for various switching applications.The 2SB1237TV2R provides excellent temperature stability, high speed switching, and a high gain-bandwidth product. Its low saturation voltage allows high-frequency switching with minimal energy loss, making it ideal for a variety of applications such as automatic copying, speed controllers, and various electronic switching circuits.

Conclusion

The 2SB1237TV2R is a bipolar (BJT) single transistor designed for applications such as automatic copying, speed controllers and various switching circuits. It features a low saturation voltage and a high gain-bandwidth product. This type of transistor is usually used in high-frequency circuits that require temperature stability, fast switching and high gain. It has excellent thermal resistance with a total power dissipation of 2W, making it suitable for use in high-frequency circuits with a high current requirement. The 2SB1237TV2R is most suitable for automatic copying, speed controllers, and various electronic switch circuits, and can be used for very high frequency switching between two circuits, such as in communication systems or to control various electronic circuits.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description