2SB1383 Allicdata Electronics
Allicdata Part #:

2SB1383-ND

Manufacturer Part#:

2SB1383

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Sanken
Short Description: TRANS PNP DARL 120V 25A TO3P
More Detail: Bipolar (BJT) Transistor PNP - Darlington 120V 25A...
DataSheet: 2SB1383 datasheet2SB1383 Datasheet/PDF
Quantity: 805
Stock 805Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 25A
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 24mA, 12A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 12A, 4V
Power - Max: 120W
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Description

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The 2SB1383 is a PNP (positive-negative-positive) bipolar junction transistor designed to serve as an amplifier or switch in various electrical and electronic applications. It is classified as a single transistor, meaning it is made up of one core material, usually silicon, and is not connected to multiple transistors. This transistor is often used in audio amplifiers, low-noise applications, pre-amplifiers and DC-DC converters, as well as being incorporated into various switching applications.

The working principle of the 2SB1383 transistor is straight-forward. In its simplest form, it amplifies or switches electrical signals by transferring current from the base (input) to the collector (output) of the transistor based on the amount of current applied to the base. This operation is known as bipolar conduction and works by forming a small electric current at the base, which then controls the flow of the larger electric current through the collector and emitter of the transistor.

The basic operation starts when a voltage is applied to the base of the transistor. The voltage “biases” the transistor into an “on” state, allowing current to pass through the collector-emitter junction. The amount of current that flows is controlled by the voltage on the base, which is known as the base-emitter voltage drop, or the “alpha” of the transistor. As the base current is increased, the collector current also increases until it reaches a saturation point where the base current can no longer control it.

The 2SB1383 is a highly efficient, low-power transistor, making it a great component for many different applications. It is designed to operate from 0 to 12 Volts with a collector-emitter breakdown voltage of 30 Volts. Its high-gain characteristics make it an ideal choice for audio amplifiers, low-noise applications, and pre-amplifiers. Additionally, its good switching characteristics make it an ideal choice for DC-DC conversion applications.

Due to its efficiency and low voltage operation, the 2SB1383 transistor can be used in many different applications. It is commonly used in audio amplifiers, low-noise amplifiers, pre-amplifiers, DC-DC converters and various switching applications. It can also be used as a variable resistor to control the voltage and current applied to electronic components.

In conclusion, the 2SB1383 is a versatile PNP bipolar junction transistor designed to serve as an amplifier or switch. It is capable of providing high gain, low noise and good switching characteristics, making it ideal for a wide range of applications. Additionally, its low-voltage, low-power characteristics make it a great choice for integrated circuits and other power-saving applications.

The specific data is subject to PDF, and the above content is for reference

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