2SB1457(T6CNO,A,F)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A 2SB1457 transistor is a type of bipolar junction transistor, specifically a single type. It is a high-speed switching transistor and is commonly found in wide bandwidth, performance-oriented applications.Most BJT transistors are comprised of three major components, an emitter, a base and a collector. In the case of a 2SB1457 transistor, an NPN structure is used. The transistor has a collector to emitter voltage rating of 80 volts, a collector current of 0.3 Amp and a power dissipation of 300mW. The most important properties of a transistor are the current gain, gain bandwidth and switching speed, so these will be the focus of this article. The current gain of a 2SB1457 transistor is typically 300, which is quite high compared to other bipolar transistors. The gain bandwidth product is also very good and is rated at 8GHz. This means that the transistor can switch at very high frequencies with only a small drop in voltage. The switching time of the transistor is also very quick, with a rise time of typically 0.5nS. The 2SB1457 transistor has a variety of applications, ranging from low-frequency amplifiers to high-performance radio-frequency amplifiers. It is also used in switching applications, such as in the form of a switch. The transistor is suitable for a wide range of switched designs, including those that need to switch high power. The working principle of a 2SB1457 transistor is quite simple. When current flows into the base of the transistor, it causes a change in the electrical characteristics of the junction between the emitter and collector. This change results in a voltage differential between the emitter and collector, which can be used to send a signal. The current gain of the transistor is determined by the ratio of the collector to the base current. When the base current is higher than the collector current, the current gain is positive, meaning that the collector current will increase. Conversely, when the base current is lower than the collector current, the current gain is negative, meaning that the collector current will decrease. The 2SB1457 transistor is a versatile device and can be used in a variety of applications. Its high current gain and wide bandwidth make it ideal for high-speed switching and performance-oriented designs. The fast switching time also ensures that signals can be sent and received quickly, making it suitable for a variety of radio frequency applications. Its low power consumption and wide collector to emitter voltage rating make it well suited for providing an efficient switching action. In summary, the 2SB1457 transistor is a high performance, single type bipolar junction transistor. It has a high current gain, gain bandwidth and switching speed, making it suitable for a range of applications. It also has a wide collector to emitter voltage rating and a low power consumption, making it well suited for providing an efficient switching action.

The specific data is subject to PDF, and the above content is for reference