| Allicdata Part #: | 2SB1570-ND |
| Manufacturer Part#: |
2SB1570 |
| Price: | $ 4.69 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Sanken |
| Short Description: | TRANS PNP DARL 150V 12A MT200 |
| More Detail: | Bipolar (BJT) Transistor PNP - Darlington 150V 12A... |
| DataSheet: | 2SB1570 Datasheet/PDF |
| Quantity: | 200 |
| 1 +: | $ 4.25880 |
| 10 +: | $ 3.80394 |
| 25 +: | $ 3.42317 |
| 100 +: | $ 3.11900 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | PNP - Darlington |
| Current - Collector (Ic) (Max): | 12A |
| Voltage - Collector Emitter Breakdown (Max): | 150V |
| Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 7mA, 7A |
| Current - Collector Cutoff (Max): | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 5000 @ 7A, 4V |
| Power - Max: | 150W |
| Frequency - Transition: | 50MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | 3-ESIP |
| Supplier Device Package: | MT-200 |
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The 2SB1570 is a PNP silicon epitaxial transistor manufactured by Shindengen Electric Manufacturing Co., Ltd. It is mainly used in audio frequency power amplifying circuits, radio frequency amplifier circuits and various switching circuits. In terms of its specific application field, it is applicable to various devices such as RF amplifiers, headphones, mixing amplifiers, CTV power amplifiers, etc. in order to meet various needs.
The 2SB1570 has typical collector-emitter voltage of 30 V, a collector current of 0.5 A, and a collector dissipation of 4 W. It also offers a high gain of 40dB typ. Its maximum operating frequency is 500MHz and its transition frequency is 65MHz. The 2SB1570 also has a very low noise figure of -60dB typ.
The 2SB1570 works on the same principle as other bipolar transistors. It consists of three components – the base, the emitter and the collector. The base acts as the control point for the transistor, as it is connected to the input signal. The emitter is connected to the input power source, while the collector is connected to the output. When the Base is stimulated, it allows current to flow from emitter to collector, thus amplifying the input signal.
The 2SB1570 also offers a wide range of packages, such as TO-126, TO-126F and TO-126G. There are also many economical packages available including DPAK, SOT-223, SC-69 and SOT-666.
Due to its exceptional characteristics and performance, the 2SB1570 is widely used in many devices. It is especially popular in audio frequency power amplifiers, radio frequency amplifiers, switching circuits and other audio related applications. Furthermore, its low noise figure makes it suitable for low-noise circuits such as CTV power amplifiers, MIPS and DTV control systems.
In conclusion, the 2SB1570 is an excellent PNP silicon epitaxial transistor with exceptional characteristics and performance. It is suitable for various types of audio frequency amplifying circuits and radio frequency amplifying circuits in order to meet different needs. Furthermore, its low noise figure and wide range of package options make it popular and widely used in various applications.
The specific data is subject to PDF, and the above content is for reference
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2SB1570 Datasheet/PDF