Allicdata Part #: | 2SB1730TLTR-ND |
Manufacturer Part#: |
2SB1730TL |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PNP 12V 2A TUMT3 |
More Detail: | Bipolar (BJT) Transistor PNP 12V 2A 360MHz 400mW S... |
DataSheet: | 2SB1730TL Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.10253 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Vce Saturation (Max) @ Ib, Ic: | 180mV @ 50mA, 1A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 270 @ 200mA, 2V |
Power - Max: | 400mW |
Frequency - Transition: | 360MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, Flat Leads |
Supplier Device Package: | TUMT3 |
Base Part Number: | 2SB1730 |
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2SB1730TL is a PNP silicon epitaxial transistor manufactured by Toshiba. It is commonly used in many applications, but notably in Class AB linear audio amplifiers.
2SB1730TL Application Field
The 2SB1730TL is a PNP transistor, with a low saturation voltage of about 0.5V, which is suitable for low power audio applications. It is well suited for use as a switching or output transistor in Class AB linear audio amplifiers due to its high breakdown voltage and low saturation voltage. Its maximum collector-emitter voltage rating of 30V makes it suitable for a wide range of audio applications. Additionally, this transistor is commonly used in a variety of switching circuits, power supplies and motor control circuits since it is able to handle larger currents than many other types of transistors.
2SB1730TL Working Principle
The 2SB1730TL is a PNP bipolar junction transistor. It consists of three layers of doped semiconductor material, arranged in an N-type base and two P-type emitters. This transistor is driven by two currents, an input current and a bias current. When the input current is increased, electrons from the N-type material move to the P-type emitters, resulting in current flow from the collector to the emitter. The bias current sets the base-emitter voltage, which enables the transistor to function properly within the desired specification.
As a switching device, the 2SB1730TL has the advantage of offering high-speed performance and low-voltage operation. This is due to its low saturation voltage, which allows for faster switching times and low power consumption. Furthermore, the low voltage rating of the transistor ensures that circuits can work reliably over a wide range of different operating voltages.
The 2SB1730TL is a reliable and cost effective transistor and is a great option for many audio applications. When used in audio amplifiers, it can provide excellent performance at low power levels while also providing good efficiency at higher power levels. Additionally, its ability to handle large currents makes this transistor a popular choice for many other types of applications, including switching circuits, power supplies and motor control circuits.
The specific data is subject to PDF, and the above content is for reference
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