2SC2229-Y(T6ONK1FM Allicdata Electronics
Allicdata Part #:

2SC2229-Y(T6ONK1FM-ND

Manufacturer Part#:

2SC2229-Y(T6ONK1FM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS NPN 50MA 150V TO226-3
More Detail: Bipolar (BJT) Transistor NPN 150V 50mA 120MHz 800m...
DataSheet: 2SC2229-Y(T6ONK1FM datasheet2SC2229-Y(T6ONK1FM Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Power - Max: 800mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD
Description

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2SC2229-Y(T6ONK1FM) is a type of transistor classified under Bipolar (BJT) - Single. Transistors are semiconductor devices that act as electronic switches to control current flow in an electronic circuit. 2SC2229-Y(T6ONK1FM) is also known as a n-channel planar silicon field effect transistor, designed to handle large current-switching applications in power amplification and switching applications. Applications of 2SC2229-Y(T6ONK1FM) 2SC2229-Y(T6ONK1FM) is ideally suited for use in Power amplifiers, DC-DC converters, high current switching applications, audio-video devices, pulse circuits, instrumentation control, digital circuits, and switching circuits.It is also suitable for use in low noise and low OFF-state leakage current applications. It features high drive current, high gain stability and fast switching speeds, making it ideal for use in digital circuits. Working Principle of 2SC2229-Y(T6ONK1FM) 2SC2229-Y(T6ONK1FM) uses the principle of N-channel planar silicon field effect transistor. It works on the principle of modulating the current through a channel by changing the voltage applied to the gate terminal. When the voltage at the gate terminal is decreased, the current supplied to the junction is lowered and the transistor is said to be in its OFF state.Meanwhile, when the voltage at the gate terminal is increased, the current supplied to the junction is increased, and the transistor is said to be in its ON state. In this state, the transistor can be used to control the current in the circuit, allowing users to regulate the speed and direction of current flow.Features of 2SC2229-Y(T6ONK1FM) The 2SC2229-Y(T6ONK1FM) offers exceptional performance in a wide range of applications. It features a large current handling capability, making it ideal for use in high-current systems. It also features a fast switching speed, allowing for quick response to digital signals.Furthermore, the 2SC2229-Y(T6ONK1FM) also features a high gain stability, ensuring consistent performance across a wide range of conditions. Additionally, the low ON-state leakage current gives it exceptional noise levels, making it an ideal choice for low-noise applications.Advantages of 2SC2229-Y(T6ONK1FM) 2SC2229-Y(T6ONK1FM) offers several advantages over other types of transistors. It has a large current handling capability, making it suitable for use in high-current systems. It also has a fast switching speed, allowing for quick response to digital signals. Additionally, its high gain stability ensures consistent performance over a wide range of conditions. Finally, its low ON-state leakage current gives it exceptional noise levels. This makes the transistor ideal for use in low-noise systems.Conclusion 2SC2229-Y(T6ONK1FM) is an ideal choice for high current switching applications, audio-video devices, instrumentation control and other digital circuits. It features a large current handling capability, fast switching speed, high gain stability and low ON-state leakage current. By virtue of all these features, it offers superior performance and reliability.

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