Allicdata Part #: | 2SC2235-OF(J-ND |
Manufacturer Part#: |
2SC2235-O,F(J |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 800MA 120V TO226-3 |
More Detail: | Bipolar (BJT) Transistor NPN 120V 800mA 120MHz 900... |
DataSheet: | 2SC2235-O,F(J Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 100mA, 5V |
Power - Max: | 900mW |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92MOD |
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Bipolar Junction Transistor (BJT) is a device that uses the characteristics of both n-type and p-type semiconductors to control current. The 2SC2235-O,F(J is a member of this group, characterized by an offset voltage collector-emitter of 0.7V max and an ON state transition frequency of 1GHz. Those properties make it well-suited for applications in analog circuits and integrated circuits where high-speed control is needed.
A 2SC2235-O,F(J is a two-terminal, similarly shaped module consisting of two p-type semiconductor layers and one n-type semiconductor layer. The base of one p-type layer and the collector of the other p-type layer are connected in parallel, and the emitter of both is connected together. This structure serves to create an insulated gate, allowing current to flow between the collector and emitter when a current is induced through the base-emitter junction. This current flow is known as the "gain," and it is controlled by the amount of current flowing through the base-emitter junction.
The "gain" of BJTs is defined as the amount of collector current divided by the amount of base current. This gain increases logarithmically, meaning that a small change in the base current results in a large change in the collector current—what is called the "Beta" of the transistor. As such, having a transistor with a high Beta is advantageous in order to minimize the base current and consequently minimize power consumption. The 2SC2235-O,F(J has a value of 75V for Beta at 250uA, enabling it to be used in circuits with low power consumption.
The 2SC2235-O,F(J is designed for various applications, from simple switching circuits to sophisticated analog and high-frequency applications. Its low power consumption makes it ideal for circuits that need to operate for a long period of time without draining the battery. Furthermore, its high switching frequency (1 GHz) makes it suitable for very-high-speed control systems, such as frequency modulation and pulse-width modulation. In addition, its low offset voltage capability (0.7 V max) enables it to be used in precision analog circuits.
In conclusion, the 2SC2235-O,F(J is well-suited for applications that demand low power consumption and high-speed operation, such as analog circuits and high-frequency control systems.
The specific data is subject to PDF, and the above content is for reference
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