2SC2859-GR(TE85L,F Allicdata Electronics
Allicdata Part #:

2SC2859-GR(TE85LFTR-ND

Manufacturer Part#:

2SC2859-GR(TE85L,F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS NPN 30V 0.5A S-MINI
More Detail: Bipolar (BJT) Transistor NPN 30V 500mA 300MHz 150m...
DataSheet: 2SC2859-GR(TE85L,F datasheet2SC2859-GR(TE85L,F Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Power - Max: 150mW
Frequency - Transition: 300MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini
Description

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2SC2859-GR(TE85L,F Application Field and Working Principle

2SC2859-GR(TE85L,F) is a type of Transistors - Bipolar (BJT) - Single. It offers excellent temperature and power characteristics, making it an ideal choice for a variety of electronics applications. This article will discuss the application field and working principle of BJT 2SC2859-GR.

Application Field

BJT 2SC2859-GR(TE85L,F) can be used in a variety of applications, including:
  • Analog and digital circuits
  • Switch and audio circuits
  • Voltage regulators
  • Motor control circuits
  • High resolution data acquisition systems
  • Power management circuits
BJT 2SC2859-GR(TE85L,F) can handle higher power levels due to its excellent temperature and power characteristics. Its high frequency response makes it suitable for a variety of circuits.

Working Principle

A bipolar transistor is a three-terminal semiconductor device. It consists of three layers, each of which contains semiconductor material. The transistor is constructed with two p-layers on opposite sides of a n-layer. The two p-layers are known as emitter and collector while the n-layer is known as the base. When an electrical current is applied to the base, it causes a voltage drop between the collector and emitter. This allows current to flow from the collector to the emitter and is known as bipolar conduction. The current is proportional to the voltage applied to the base. The current gain of BJT 2SC2859-GR(TE85L,F) is typically 100-400. This is due to its excellent temperature and power characteristics. It is also capable of handling higher power levels than other transistors.

Conclusion

2SC2859-GR(TE85L,F) is a type of Transistors - Bipolar (BJT) - Single, which is capable of handling higher power levels due to its excellent temperature and power characteristics. It can be used in a variety of applications, including analog and digital circuits, switch and audio circuits, voltage regulators, motor control circuits, high resolution data acquisition systems, and power management circuits. Its current gain is typically 100-400 and it is suitable for a variety of circuits due to its high frequency response.

The specific data is subject to PDF, and the above content is for reference

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