2SC2235-O(FA1,F,M)

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The 2SC2235-O(FA1, F, M) is a member of the Bipolar Junction Transistor (BJT) family. It comprises a single, three layer PN junction device. It has an NPN configuration and features an encapsulated molded plastic device, a high circulating current capability, and low collector to emitter saturation voltage.

The 2SC2235-O(FA1, F, M) is a medium-power NPN high-frequency transistor, ideal for use in high-frequency switchin, amplifier and oscillator applications. It has a transistor die size of 0.22mm, and is capable of driving up to 500mA of collector current, making it ideal for use in mid-power applications.

It is designed to operate under ambient temperatures ranging from –55°C to +150°C and is available in TO-92, TO-92L, TO-126 and SOT-23 packages. This provides design flexibility for various applications.

The 2SC2235-O(FA1, F, M) is a high-gain transistor and has a high reverse transfer capacitance, which makes it well suited for use in frequency multiplying circuits, oscillators and other high-frequency switching applications. It also provides excellent gain stability with temperature, making it ideal for applications in which the temperature range is varied or variable. The device is capable of switching frequencies up to 100MHz, making it suitable for use in high-frequency radio applications.

The 2SC2235-O(FA1, F, M) has a minimum Transition Base-Emitter Voltage of 0.7V and a minimum Transition Base-Collector Voltage of 1.4V. It also has a maximum Collector-Emitter Voltage of 35V and a maximum Collector-Base Voltage of 50V. These ratings make the device suitable for use in a variety of applications.

The 2SC2235-O(FA1, F, M) is a useful device for high-power and high-frequency applications, especially those requiring the switching of high currents. It is well suited for use in power amplifiers, oscillators, and even in pulsed power supplies. It is also used in audio and video applications, and can be utilized as an interface between digital and analog circuits.

The 2SC2235-O(FA1, F, M) works by having the collector connected to the emitter. The base is the terminal which controls the current flow. When a bias voltage is applied to the base, the transistor will allow current to flow between the collector and the emitter. When the bias voltage is increased, the current flowing between the two terminals will increase. This is how the transistor can be used to switch currents and amplify them by increasing the voltage applied to the base.

The 2SC2235-O(FA1, F, M) is a useful device for a variety of applications. Its high-frequency characteristics, its ability to drive high currents, and its ability to operate in temperatures ranging from -55°C to +150°C make it suitable for use in many applications. It can be used in audio and video amplifiers, high-frequency switching, amplifiers and oscillators, power supplies, and even for levels shifting between digital and analog circuits. Its wide operating temperature range also makes it suitable for use in a variety of temperature sensitive applications.

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