Allicdata Part #: | 2SC2812N6-TB-E-ND |
Manufacturer Part#: |
2SC2812N6-TB-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 50V 0.15A CP |
More Detail: | Bipolar (BJT) Transistor NPN 50V 150mA 100MHz 200m... |
DataSheet: | 2SC2812N6-TB-E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 135 @ 1mA, 6V |
Power - Max: | 200mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | 3-CP |
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2SC2812N6-TB-E is a bipolar transistor module designed to support the increasingly complex power requirements of the modern world. This transistor module is designed to enable greater control over the current, voltage, and temperature when using and controlling electrical power systems. The 2SC2812N6-TB-E application field and working principle will be discussed in this article.
The 2SC2812N6-TB-E is a high-performance, cost-effective transistor module that is mainly used in the telecommunications industry. This transistor can support a variety of applications, such as switching, amplification, and linear regulation. This module has superior performance and stability, making it ideal for applications that require precise control.
This module is made of a single transistor, the 2SC2812N6-TB-E, which is based on the NPN silicon transistor design. The module features a dual-in-line package that consists of two insulated aluminum base plates and a dielectric. This transistor has a maximum power dissipation of 1.25W and a voltage rating of 1,000V. This module also has a high gain value of 90dB and an operating temperature range of -40 to +85C.
The 2SC2812N6-TB-E has several distinct advantages. First, it has high noise immunity and high switching speed, which allows it to perform reliable switching operations. The transistor also has good thermal and electrical stability and a high breakdown voltage, making it suitable for applications where high voltage is necessary. Additionally, the module can provide a fast response to changing input signals. Finally, the module provides good input and output impedance matching, allowing it to be used in sensitive, high-powered applications.
The 2SC2812N6-TB-E is designed to work in a variety of applications. It can be used as a switch, an amplifier, a linear regulator, or any combination of these. When used as a switch, the module acts as a solid-state switch, using an input signal to turn the device on and off. When used as an amplifier, the module increases the signal strength, allowing for higher power outputs. The linear regulator functions similarly to an amplifier, except that it regulates the output voltage or current to the desired level.
The 2SC2812N6-TB-E operates on a basic principle. When the input signal is applied, the transistor\'s base-emitter voltage increases, allowing current to flow from the emitter to the collector. When the current reaches the desired level, the transistor\'s collector-emitter junction can open, limiting the current flow and providing the desired output signal. By carefully controlling the voltage and current, a wide range of output signals can be generated.
In conclusion, the 2SC2812N6-TB-E is a high-performance transistor module designed to support a variety of applications. It has a high gain value and high switching speed, and its dielectric package allows for greater control over current, voltage, and temperature. The module can be used as a switch, an amplifier, or a linear regulator, and it operates on the basic principle of controlling the voltage and current to generate desirable output signals. This module is ideal for applications that require precise control and high levels of power.
The specific data is subject to PDF, and the above content is for reference
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