| Allicdata Part #: | 2SC2812N6-CPA-TB-E-ND |
| Manufacturer Part#: |
2SC2812N6-CPA-TB-E |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 50V 0.15A CP |
| More Detail: | Bipolar (BJT) Transistor NPN 50V 150mA 100MHz 200m... |
| DataSheet: |  2SC2812N6-CPA-TB-E Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 150mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Vce Saturation (Max) @ Ib, Ic: | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 1mA, 6V |
| Power - Max: | 200mW |
| Frequency - Transition: | 100MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | 3-CP |
Description
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2SC2812N6-CPA-TB-E is a type of transistor belonging to the category of bipolar junction transistors (BJT). The BJT comprises of three terminals, the emitter, the collector and the base. In the case of 2SC2812N6-CPA-TB-E, the emitter terminal is sitting in the center with the collector and the base terminals located at the periphery. It is a single transistor.2SC2812N6-CPA-TB-E includes two BJT transistors, located on a single chip. These transistors are also known as dual transistors and are fabricated using integrated circuit technology. The transistors are formed by utilising two distinct layers of a semiconductor material like germanium (rather than doped silicon).It finds its applications in the field of telecommunications, computer networks, medical electronics, audio and power control equipments. It is a very useful and reliable device and allows for the use of low power in its applications.The transistor works through the principle of minority carriers. This involves applying a small voltage to the base of the transistor, which in turn causes current to flow through the device. This current is known as the collector current and is regulated by the applied base-to-emitter voltage.At the same time, the current through the collector is controlled by transistor\'s gain factor which is known as the Early effect. This phenomenon involves the early release of electrons and holes from the emitter region into the base-collector junction. Thus, the collector current is regulated by the Early effect and hence the collector current is maintained at a specific level, regardless of the applied base-to-emitter voltage.By controlling the Early effect, 2SC2812N6-CPA-TB-E allows for accurate control of the collector current. This can be used to accurately control the electrical power across the device, which makes it a very reliable and efficient device.The other important features of 2SC2812N6-CPA-TB-E include its small size, which makes it suitable for high frequency applications, its wide current range, and its low power dissipation. Furthermore, its high gain factor allows for accurate modelling of complex electrical signals.In conclusion, 2SC2812N6-CPA-TB-E is a very reliable and accurate device for a variety of applications. It is built using advanced integrated circuit technology, which allows for its small size and wide current range. Its high gain factor also allows for reliable control over signals. It finds its applications mainly in the fields of telecommunications and computer networks.
The specific data is subject to PDF, and the above content is for reference
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