2SC29250SA Allicdata Electronics
Allicdata Part #:

2SC29250SATB-ND

Manufacturer Part#:

2SC29250SA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN 50V 0.7A TO-92
More Detail: Bipolar (BJT) Transistor NPN 50V 700mA 750mW Thro...
DataSheet: 2SC29250SA datasheet2SC29250SA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 150mA, 10V
Power - Max: 750mW
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-B1
Base Part Number: 2SC2925
Description

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The 2SC29250SA is a bipolar junction transistor manufactured by Renesas Electronics, particularly designed for linear/machine applications. It belongs to the single transistors category within the family of transistors that use bipolar junction technology (BJT).

A BJT is an electronic component with three terminals and is usually made of three layers of semiconductor materials. It is an active semiconductor device, meaning it has an amplification factor and can control large current flows using small current controls. It typically consists of an emitter, a base, and a collector.

The 2SC29250SA is typically used as an amplifier, switch, or variable gain amplifier. This type of transistor is typically used in audio applications, such as amplifiers for speakers, as well as in industrial applications and telecommunication systems.

The 2SC29250SA\'s main feature is its high transition frequency (fT) and oscillation frequency (fOSC), which are important characteristics defining its applications. It has a 1000V collector-emitter voltage, a 700V collector-base voltage, and a 300mA collector current. The total power dissipation at 25°C ambient temperature must not exceed 2000mW.

In addition to its mechanical properties, the 2SC29250SA features some electrical properties. This type of transistor has an amplification factor (β) that ranges from 55 to 180. In addition, the 2SC29250SA has a collector-emitter saturation voltage (VCEsat) ranging from 0.3 to 0.38V and a collector-emitter cut-off current (ICE) ranging from 200 to 1000µA.

The 2SC29250SA works by controlling the current flow through the emitter-base junction by the base voltage. When a voltage is applied to the base, the transistor begins to conduct current between the emitter and collector. When the base voltage is removed, the transistor stops conducting and current flow is stopped. This also affects the current gain of the transistor, which is the ratio of the output current of the collector to the input current of the base.

In addition to its electrical properties, the 2SC29250SA has a variety of safety and operational specifications. These include high isolation voltage, low noise and high frequency operation, over-temperature protection, and junction temperature monitoring capabilities. The 2SC29250SA is also resistant to electrostatic discharge (ESD) and is capable of operating at different temperatures.

The 2SC29250SA is a highly versatile transistors and can be used in a wide assortment of applications. This type of BJT is commonly used for amplifying signals, switching devices, and controlling current flows in industrial, telecommunication, and audio applications.

The specific data is subject to PDF, and the above content is for reference

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