2SC2655-Y,T6KEHF(M

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	2A
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 1A
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 500mA, 2V
Power - Max:	900mW
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Long Body
Supplier Device Package:	TO-92MOD

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The 2SC2655-Y,T6KEHF(M is a silicon npn epitaxial planar type bipolar transistor, classified as a single transistor. It is originally designed to be used as an RF amplifier operating at 12.5 GHz and other frequencies used in high frequency amplification. In order to maximize the power conversion from the transistor, the 2SC2655-Y,T6KEHF(M has an integrated structure which reduces the required number of external components. The resulting product is a high power transistor with greatly enhanced efficiency and excellent linearity.To better understand the 2SC2655-Y,T6KEHF(M and its application field, it is important to first understand its working principle. This single bipolar transistor fundamentally relies on the physical phenomenon of electron sharing to allow current to flow. A single bipolar transistor consists of three layers of semiconductor materials containing different dopants. The layers consist of a base layer, an emitter layer, and a collector layer. Whilst the collector layer is positively-doped, the base and emitter layers are both negatively-doped. When the base layer is connected to a voltage source, it allows current to flow between the base and the emitter, where it is further amplified and flows to the collector. This allows for current amplification and the switching of electrical signals through the 3 layers of the transistor.Now that we understand the concept of the working principle, let\'s review its application field and how it can be employed. The 2SC2655-Y,T6KEHF(M is designed for high frequency amplification and is suitable for use in applications such as radio broadcasting, microwave communication, TV broadcasting, and bluetooth technology. The main feature enabling usage in such applications is its forward transfer gain, which is the measure of current amplification rate. This feature allows the amplifier to quickly switch between input and output signals, thus enabling the quick processing of different frequencies and radio signals. In addition, the 2SC2655-Y,T6KEHF(M also has high power conversion efficiency due to its integrated structure, allowing it to process high power signals with minimal risk of damage or other losses.In conclusion, the 2SC2655-Y,T6KEHF(M is a single bipolar transistor designed to be used as an RF amplifier operating at 12.5 GHz and other frequencies used in high frequency amplification. Its integrated structure and high efficiency allow for high power signal processing with minimal losses and damages. Applications of this single bipolar transistor involve radio broadcasting, microwave communication, TV broadcasting, and bluetooth technology. These are all applications which require amplification of signal and the switching of electrical frequencies at a very high speed. We hope this article has clarified the workings and application field of the 2SC2655-Y,T6KEHF(M, allowing it to be used in different areas of technology.

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