2SC2412KT246R

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

2SC2412KT246R is a high power, NPN, hybrid bipolar transistor with built-in ESD protection and in-built diodes for enhanced reliability. This makes it an ideal choice for power management applications and provides improved performance over its BJT counterparts. There are several different types of transistors available, each designed for a specific application and with different characteristics. 2SC2412KT246R belongs to the Single Bipolar (BJT) Transistor category and is primarily used in power management applications.

The 2SC2412KT246R is composed of two transistors: one PNP and one NPN. This combination allows the transistor to act as both a switch and a current amplifier. The device has an emitter-collector breakdown voltage of 30V and a maximum DC current gain of 500. This makes it suitable for switching applications demanding high current and voltage operation, such as power supplies, AC/DC and DC/DC converters, and motor controls. The device also features an input capacitance of 3.3pF, enabling low noise operation.

The 2SC2412KT246R is designed for high-current applications, so it has a low R_bias and a more robust power drive capability than other single BJT transistors. Additionally, the device has ESD protection built-in on both the collector and emitter terminals. This helps to protect the device from damage in the event of electrical surges, guaranteeing reliable operation. The maximum collector current for the 2SC2412KT246R is 5A and the recommended operating temperature range is -55°C to +125°C.

The 2SC2412KT246R works by using the "Base-Emitter Voltage" (Bae-Emitter V) applied to the base terminal to control the flow of current through the device. When the base-emitter voltage is high, the current flow through the device increases. When the base-emitter voltage is low, the current flow is reduced. This voltage will determine the amount of power that can be achieved, so it is important to understand how this voltage is affected by the load and the environment in order to ensure optimal performance.

In conclusion, the 2SC2412KT246R is an ideal choice for power management applications. It has a high DC current gain of 500, an R_bias of 1.4 Ohm and maximum collector current of 5A, as well as ESD protection to ensure reliable operation. Furthermore, the base-emitter voltage can be used to control the amount of current and power that can be achieved, allowing for great flexibility when used in power management applications.

The specific data is subject to PDF, and the above content is for reference