Allicdata Part #: | 2SC2235-Y(DNSOAF)-ND |
Manufacturer Part#: |
2SC2235-Y(DNSO,AF) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 800MA 120V TO226-3 |
More Detail: | Bipolar (BJT) Transistor NPN 120V 800mA 120MHz 900... |
DataSheet: | 2SC2235-Y(DNSO,AF) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 100mA, 5V |
Power - Max: | 900mW |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92MOD |
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2SC2235-Y(DNSO,AF) Application Field and Working Principle
2SC2235-Y (DNSO,AF) is a 2SC2235-Y type single-transistor semiconductor device. It is an NPN bipolar junction transistor (BJT) with an epitaxial NPN structure. It is manufactured using Toshiba\'s advanced SILICON-BIPOLAR CMOS process, and has a high breakdown voltage, making it ideal for power applications. 2SC2235-Y (DNSO,AF) provides excellent performance in linear applications such as amplifiers, analog switches, and power regulators. Its features include high gain, good thermal stability, strong current capacity, low ripple voltage, and simple construction.
2SC2235-Y (DNSO,AF) is characterized by a high voltage of 80 volts, a low current of 0.05 amperes, and a maximum power dissipation of 10 watts. It has a wide range of use in power applications in the industrial, commercial, transportation, aerospace, medical, and entertainment industries. Examples of its use include, motor control, HVAC systems, AC/DC converters, robots, DC motors, etc.
The working principle of a 2SC2235-Y (DNSO,AF) transistor is simple. It is a current-controlled device that works based on the mechanism of a tiny current, or bias current, flowing through a base of the transistor, which in turn controls the larger, collector-to-emitter current that is flowing across the transistor. When a voltage is applied to the base of the transistor, it creates an electric field across a very small region, called the depletion layer. This electric field causes current to flow through the base-emitter junction, which in turn causes current to flow from the collector to the emitter. The relative magnitude of the collector-emitter current is proportional to the input current flowing into the base, allowing the transistor to be used to amplify or modify signals.
2SC2235-Y (DNSO,AF) is a versatile device that can be used in various applications since it can be operated in the active region and the saturation region. In the active region, it can be used as an amplifier, a voltage regulator, or a current regulator. In the saturation region, it can be used as a switch. The transistor also provides low power consumption and low heat generation, which makes it suitable for applications with tight power budgets.
2SC2235-Y (DNSO,AF) is a reliable and efficient single-transistor semiconductor device that offers high gain and low-noise characteristics, making it the perfect choice for a variety of power applications. Its high voltage and current capacity, combined with its low-ripple voltage, make it suitable for a wide range of applications. Its ability to be operated in both the active region and saturation region makes it very versatile. The device is also very cost effective, making it a great choice for a variety of projects.
The specific data is subject to PDF, and the above content is for reference
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