Allicdata Part #: | 2SC2229-Y(T6MIT1FM-ND |
Manufacturer Part#: |
2SC2229-Y(T6MIT1FM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 50MA 150V TO226-3 |
More Detail: | Bipolar (BJT) Transistor NPN 150V 50mA 120MHz 800m... |
DataSheet: | 2SC2229-Y(T6MIT1FM Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 10mA, 5V |
Power - Max: | 800mW |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92MOD |
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2SC2229-Y (T6MIT1FM) Application Field and Working Principle
Transistors - Bipolar (BJT) - Single
The 2SC2229-Y (T6MIT1FM) is a NPN Silicon Epitaxial Planar Transistor produced using Nichicon\'s high-precision and advanced Semiconductor process technology. It is mainly used in applications such as switching, amplification, and oscillation circuits. The 2SC2229-Y offers high voltage and current gain, low power consumption, and superior switching characteristics, making it an ideal choice for electronic devices.
The 2SC2229-Y has a maximum collector-to-emitter voltage rating of 50 V, a maximum collector current rating of 550 mA, and a maximum power dissipation rating of 800 mW. It also has a frequency range of 100kHz and a maximum collector-to-base voltage rating of 50 V. The 2SC2229-Y has a high breakdown voltage of 50V, a low saturation voltage and a fast response time, features which make it especially suitable for use in switching circuits and switching power supplies. Additionally, the 2SC2229-Y has minimal noise and little signal distortion, which make it ideal for use in high fidelity audio equipment.
The 2SC2229-Y uses a common emitter configuration to work as an amplifier. In this configuration, the emitter is connected to the ground, and the collector is connected to the load. When current is applied to the base, a voltage is created between the collector and the emitter. This voltage is amplified by the transistor, allowing a higher voltage to be output from the collector. This amplified voltage is then used to power the load.
The 2SC2229-Y also features Darlington pair technology, which allows for higher current gain. In this configuration, two transistors are connected in series, with their emitters tied together and their bases tied together, and their collectors tied to the power supply and load circuit, respectively. The two transistors work as one, and the current gain is increased due to the increased current gain of both transistors combined. This configuration is commonly used in amplifier and oscillator circuits.
The 2SC2229-Y is suitable for use in a variety of applications and can be used in a broad range of consumer electronics, automotive, and industrial equipment. It is ideal for use in audio pre-amplifiers, audio power amplifiers, motor control and switching power supplies, control circuits, switching circuits, and other power applications. The 2SC2229-Y is also ideal for use in audio equipment and various audio applications, such as amplifiers and oscillators.
The 2SC2229-Y is a highly reliable PNP transistor which offers superior performance, superior switching characteristics, and fast response time. It is suitable for use in a variety of applications, from consumer audio equipment to automotive and industrial circuits. It is a highly cost effective solution, offering great value for money.
The specific data is subject to PDF, and the above content is for reference
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