Allicdata Part #: | 2SC2058STPP-ND |
Manufacturer Part#: |
2SC2058STPP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN 25V 0.05A 3PIN SPT |
More Detail: | Bipolar (BJT) Transistor NPN 25V 50mA 300MHz 300mW... |
DataSheet: | 2SC2058STPP Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 82 @ 1mA, 6V |
Power - Max: | 300mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | SC-72 Formed Leads |
Supplier Device Package: | SPT |
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2SC2058STPP is a type of bipolar junction transistor. Transistors are three-terminal semiconductor devices and are commonly used as electronic switches and amplifiers. A bipolar junction transistor (BJT) is made up of three regions, n-type, p-type and a base region, and can amplify and switch signals, depending on its circuit configuration. The 2SC2058STPP is a type of NPN transistor and is one of the most common types of transistors available.
The 2SC2058STPP is widely used in electronic circuits due to its reliable performance and cost efficient nature. Its low voltage and large current capabilities make it ideal for power control applications such as switching circuits, power amplifiers and motor control systems. The device also features good linearity, making it highly suitable for linear amplification applications such as RF mixers, oscillators and amplifiers.
The device is composed of two layers of N-type semiconductor material and one layer of P-type base material. The N-type layers act as current carriers while the P-type base region acts as the control layer. The N-type layers, or emitter and collector regions, are connected to each other and the P-type base region by an ohmic connection. The emitter-to-base and collector-to-base junctions each form a diode.
The working principle of the 2SC2058STPP is based on the fact that current flow is controlled by the bias voltage applied to the base region. When a positive bias voltage is applied to the base region, current can flow from the emitter to the collector. The current gain, or β, of the transistor depends on the exact type of transistor and is a function of the voltage applied to the base. The current gain can vary from a few hundred to a few thousand.
The device is most commonly used in common emitter and common collector configurations, as these are the most efficient circuit configurations for use with transistors. Common emitter increases the current gain of the device while common collector decreases the current gain. The device may also be used in amplifier configurations, specifically as a voltage amplifier.
The 2SC2058STPP is a very versatile device and can be used in a wide variety of applications. It is typically used in heavy duty power switch and amplifier applications, as well as in switching circuits, motor control systems and RF mixers and oscillators. In addition, its small size and low cost make it an ideal choice for hobbyists and students.
In conclusion, the 2SC2058STPP is a very popular type of bipolar junction transistor. It is characterized by its reliable performance and cost effective nature, making it suitable for a variety of applications. Its most common uses are in switching circuits, power amplifiers, motor controllers and amplifier configurations. Its low voltage and large current capabilities make it ideal for heavy duty power switching applications.
The specific data is subject to PDF, and the above content is for reference
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