2SC2705-O(TPE6,F)

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	50mA
Voltage - Collector Emitter Breakdown (Max):	150V
Vce Saturation (Max) @ Ib, Ic:	1V @ 1mA, 10mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 10mA, 5V
Power - Max:	800mW
Frequency - Transition:	200MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Long Body
Supplier Device Package:	LSTM

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.Introduction: The 2SC2705-O (TPE6,F) is a NPN silicon transistor that is used in various applications, primarily industrial and automotive. It is a type of bipolar junction transistor (BJT), which are used in applications that require direct current (DC) amplification or switching. The 2SC2705-O (TPE6,F) is classified as a single transistor, meaning it has three terminals (base, collector, and emitter) and one layer of semiconductor material.Application Fields:
The 2SC2705-O (TPE6,F) is primarily used in industrial and automotive applications. It is used for applications that require low-level switching of currents and for general driver applications. It is also used for DC current amplification and to control high-frequency signals.In industrial applications, it is used for motor control, switching, and driving applications. It can also be used in low-level switching applications, thermal relay protection circuits, and buffer circuits. In automotive applications, it is used for light control, door latch control, and driver circuits.Working Principle:
2SC2705-O (TPE6,F) works by biasing the semiconductor material with respect to the terminals. When a small direct current is applied to the base, it causes electrons to be freed from the material near the emitter. These free electrons then move towards the collector, while simultaneous movement of holes (atoms with one single electron missing) in the opposite direction produces a net current flow from the collector to the emitter. This current flow then amplifies the applied voltage and current from the base to the collector. The amount of current flow between the collector and the emitter depends on the number of electrons that are freed from the semiconductor material, which is determined by the applied voltage bias. The gain of a BJT transistor is typically measured in terms of Collector-to-Emitter Current Gain (β) and it is estimated to be around 130 for the 2SC2705-O (TPE6,F). Conclusion:The 2SC2705-O (TPE6,F) is a type of NPN silicon transistor and it is classified as a single transistor. It is mainly used in industrial and automotive applications and it can be used for low-level switching, current amplification, and to control high-frequency signals. The 2SC2705-O (TPE6,F) works by biasing the semiconductor material and producing current flow from the collector to the emitter, which amplifies the voltage and current applied to the base. The gain of the transistor is estimated to be around 130 and it has good operating characteristics which makes it suitable for a variety of applications.

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