2SC2714-Y(TE85L,F) Allicdata Electronics
Allicdata Part #:

2SC2714-Y(TE85LF)TR-ND

Manufacturer Part#:

2SC2714-Y(TE85L,F)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANSISTOR NPN S-MINI
More Detail: RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mo...
DataSheet: 2SC2714-Y(TE85L,F) datasheet2SC2714-Y(TE85L,F) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 550MHz
Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
Gain: 23dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini
Description

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The 2SC2714-Y (TE85L,F) is a bipolar junction transistor (BJT) with a high frequency (RF) rating. It has the features of low noise, wide band gain, high breakdown voltage, and low collector-emitter saturation voltage. It is commonly used in RF components and applications.

The 2SC2714-Y is an NPN transistor. This means that the emitter is connected to the negative terminal of the power supply and the collector is connected to the positive terminal. The base is the control terminal of the transistor and is used to control the current flow between emitter and collector. When a positive voltage is applied to the base, it increases the gap between the base and emitter, allowing the current to flow through the transistor, which turns the transistor on. Conversely, when a negative voltage is applied to the base, the gap between the base and emitter shrinks, and the current is cut off, turning the transistor off.

The 2SC2714-Y has a maximum collector current of 500mA and a maximum collector-emitter voltage of 80V. It has a maximum power dissipation of 625mW, a maximum frequency of 500MHz, and a gain bandwidth product of 6.5GHz. The transistor is able to withstand high power frequencies and amplitudes, making it ideal for use in high frequency applications.

The 2SC2714-Y is commonly used in amplifiers and oscillators in RF applications. In an amplifier, the transistor is used to increase the amplitude of the signal. This is done by creating a controlled gap between the base and emitter, which allows the current to flow through the transistor, thus amplifying the signal. Oscillators use the transistor in the same way, but in a different way. The transistor is used to create a stable, repeating electrical signal by rapidly opening and closing the gap between the base and emitter in order to generate a stable, continuous signal. This process is known as oscillation.

In addition to its use in RF applications, the 2SC2714-Y can also be used in other electronic devices such as switching power supplies, converters, and inverters. The transistor is also used in satellite and UHF communication systems. It is also commonly used in radio frequency identification (RFID) systems and in radio and television broadcasting equipment.

In summary, the 2SC2714-Y is a high-frequency bipolar junction transistor with a wide band gain, low noise and high breakdown voltage, and is used in amplifiers, oscillators, and other electronic devices. It is ideal for use in high frequency applications such as radio and television broadcasting, satellite and UHF communication systems, and RFID systems.

The specific data is subject to PDF, and the above content is for reference

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