Allicdata Part #: | 2SC2655-YF(J-ND |
Manufacturer Part#: |
2SC2655-Y,F(J |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 2A 50V TO226-3 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 2A 100MHz 900mW T... |
DataSheet: | 2SC2655-Y,F(J Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 50mA, 1A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 500mA, 2V |
Power - Max: | 900mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92MOD |
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The 2SC2655-Y,F(J transistor is a single bipolar junction transistor used in a wide range of applications. It is comprised of a NPN transistor with a collector-emitter voltage of 40V and 100mA current-gain-bandwidth product.
The 2SC2655-Y,F(J is a general-purpose switching transistor, designed to switch large currents and high-voltage power. It is suitable for a range of applications, including amplifying signal circuits, signal relay circuits, audio amplifiers, motor-egulator circuits, and so on.
It also features a high breakdown voltage, high frequency characteristics, and low noise, making it well suited for a variety of signal circuit applications.
The 2SC2655-Y,F(J is capable of withstanding high voltages, and has a high current gain and low saturation voltage, allowing it to deliver high switching speeds and efficient, reliable operation. It is capable of handling high-voltage, large-current loads, making it ideal for applications such as power-supply switching and motor driving.
The 2SC2655-Y,F(J transistor\'s working principle is based on the principle of a four-layer p–n–p–n structure. When voltage is applied to the base-emitter junction, a current flows through the base, and a large current flows through the collector and the emitter. This current flow is regulated by the base-emitter voltage.
The collector-emitter voltage of the 2SC2655-Y,F(J drives the current flow from the collector to the emitter. This current flow depends on the resistance of the collector-emitter path. On the other hand, the current flow through the collector is regulated by the base current. As a result, the 2SC2655-Y,F(J has a current gain band with a wide range.
The 2SC2655-Y,F(J transistor is also capable of handling high voltages, high currents, and high temperature extremes. It is also able to operate in temperatures as high as 175°C. The transistor is also very efficient in terms of power consumption, as it has a low saturation voltage, ensuring that power consumption is kept to a minimum.
In conclusion, the 2SC2655-Y,F(J is a versatile single bipolar junction transistor, with a high current gain and breakdown voltage, making it ideal for a range of applications, including signal, power supply, and motor driving. Its low saturation voltage and power consumption, along with its ability to withstand high temperatures and voltages, make it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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