Allicdata Part #: | 2SC2859-O(TE85LF)TR-ND |
Manufacturer Part#: |
2SC2859-O(TE85L,F) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 30V 0.5A S-MINI |
More Detail: | Bipolar (BJT) Transistor NPN 30V 500mA 300MHz 150m... |
DataSheet: | 2SC2859-O(TE85L,F) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 100mA, 1V |
Power - Max: | 150mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | S-Mini |
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2SC2859-O(TE85L,F) Application Field and Working Principle
The 2SC2859-O is an NPN epitaxial type planar silicon transistor manufactured by Toshiba. It belongs to the transistors - bipolar (BJT) - single category. This transistor is designed for use in general-purpose switching and amplification. It can also be used in cellular phones and other electronic equipment that require low noise and high-gain linearity.
In terms of features and characteristics, the 2SC2859-O has a collector-emitter voltage of 80V, a collector-base voltage of 80V, an emitter-base voltage of 3.9V, a maximum collector current of 0.1A, a maximum total power dissipation of 0.1W, and an operating and storage temperature range of -55°C to 150°C respectively. It also has built-in protection against electrostatic or high-voltage overstress.
The 2SC2859-O has an emitter-to-base connection that enables increased current gain, making this transistor an ideal choice for use in high-current, high-gain applications. It is also suitable for applications where very low noise and low-distortion signal processing is required. The device has a high-voltage rating and provides a low level of leakage current, making it perfect for RF high voltage applications.
The working principle behind the 2SC2859-O is based on the use of an electric field. The transistor is constructed out of three semiconductive layers, which are the emitter, base, and collector layers. The base and emitter are separated by a thin insulating layer. The base and collector layers are linked together by two leads. When a voltage is applied to the base lead the electric field causes a current to flow between the emitter and collector layers, which allows the transistor to amplify signals.
The 2SC2859-O is a versatile transistor with a wide range of applications. It can be used in modulators and signal amplifiers, switching circuits, switches, logic circuits, and signal detectors. Due to its superior noise performance and high current gain, it is particularly suitable for demanding signal processing applications. It has proven to have excellent reliability and performance in many signal processing and communications applications.
The 2SC2859-O is a popular choice for many applications due to its low cost and excellent characteristics. It offers superior reliability, low noise performance and a wide range of operating parameters for highly efficient and accurate signal processing. The extensive features and basic design make this transistor an ideal choice for hobbyists, budding engineers, and professional applications.
The specific data is subject to PDF, and the above content is for reference
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