Allicdata Part #: | 2SC2235-Y(6MBH1AF-ND |
Manufacturer Part#: |
2SC2235-Y(6MBH1,AF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 800MA 120V TO226-3 |
More Detail: | Bipolar (BJT) Transistor NPN 120V 800mA 120MHz 900... |
DataSheet: | 2SC2235-Y(6MBH1,AF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 120V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 100mA, 5V |
Power - Max: | 900mW |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92MOD |
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The 2SC2235-Y is a general purpose industrial transistor that is part of the "Single Bipolar (BJT)" transistors category. 2SC2235-Y is a small signal PNP transistor used in robotics and other automation applications, consumer and automotive electronics and material handling systems. It can be used as an amplifier, switch, digital logic gate, transistor radio circuitry, lighting control, and voltage converter.
The component is offered in a choice of three different device packages, including the TO-220AB, DPAK and P-Pak formats. Among the most important performance properties of the 2SC2235-Y are the maximum current rating of 1.5A, the low collector-emitter saturation voltage at 0.9V and the high transconductance at 2.6mS.
To understand the 2SC2235-Y, it is important to know its application field and working principle. First, there are two main application fields for this particular device. First, it can be used for audio amplifications of current ratings typically lower than 1.5A, due to its low on-state saturation voltage and high transconductance. Second, it can be used for switching applications, due to its medium speed switching capability, when connected in a bridge circuit.
The 2SC2235-Y operates according to the working principle of the bipolar junction transistor (BJT). This particular device has a PNP design, which means it can be configured to operate as either an NPN or PNP transistor. The primary function of BJTs is to vary a current across a load depending upon the base current. In other words, it enables a weak current to control a much larger current. When a base current is applied, the current flows from the collector to the emitter. This causes a change in the collector current, which is regulated by the base current. As the base current increases, the collector current also increases, until it reaches its maximum value.
The 2SC2235-Y also has many other performance properties, such as its maximum collector-emitter voltage rating of 45V, the maximum power dissipation of 750mW and its gain bandwidth product of 3MHz. This particular device also features an input capacitance of 5.6pF and a small noise figure at .12mA. Some of the other features of this device include its ability to work with logic gate signals and its low leakage current of .07uA
In conclusion, the 2SC2235-Y is a versatile and reliable high-performance transistor with a variety of potential applications. Its low saturation voltage, transient speed and low cost make it an attractive choice for a wide range of applications, including audio amplification, switching and material handling. Its BJT design and integrated features make it easier to use in terms of structure and logic control.
The specific data is subject to PDF, and the above content is for reference
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