2SC248000L Discrete Semiconductor Products

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2SC248000L is a single, NPN, bipolar junction transistor (BJT) designed for radio frequency (RF) applications. It is widely used in RF amplifiers, oscillators, and other RF circuits. The 2SC248000L is one of the most popular transistors in the RF world, due to its excellent gain, low noise performance, and high frequency stability. In addition, it has good thermal stability, making it ideal for high power RF applications.

The 2SC248000L is a general purpose device with a high current gain, high breakdown voltage, and low saturation voltage. It is made in a plastic TO-127 package, which has excellent mechanical stability, thermal stability, and electrical insulation. The device is designed to operate between -55°C and 175°C.

The 2SC248000L works on the principle of the collector-base junction, which is made up of three regions: an n-type semiconductor, a p-type semiconductor, and an intrinsic semiconductor. This collector-base junction has the ability to act as a switch, connecting the collector to the base and allowing current to flow in one direction. The collector-emitter junction, which is made up of two regions, an n-type semiconductor and a p-type semiconductor, is also a switch, allowing current to flow in the opposite direction to the collector-base junction. This junction also allows the transistor to amplify current.

By applying a small current to the base, the current gain of the transistor can be increased dramatically. This increase in current gain is the basis for what makes bi-polar transistors operate. The current gained by the collector is dependant on the current applied to the base, and thus, by controlling the current at the base, the transistor can be used to control current in another circuit.

The 2SC248000L is used extensively in RF signal conditioning and amplification. In these applications, the transistor is used as an amplifier, an oscillator, and as a mixer. In signal amplifying applications, the transistor acts as a current amplifier and can be used to gain control over signal strength. In oscillator applications, the transistor can be used to create a signal capable of carrying a data or audio signal over long distances, and in mixer applications, the transistor is used to combine two signals, allowing for a greater signal-to-noise ratio.

The 2SC248000L is also used for RF power amplifiers, as it is one of the most popular transistors used in these types of applications. It has excellent gain, low noise performance, and stability over a wide range of temperatures, making it ideal for high power applications. The device is also very cost effective, which is why it is so popular amongst radio frequency engineers and power amplifier designers.

In summary, the 2SC248000L is a single, NPN, bipolar junction transistor designed for radio frequency applications. It is made in a plastic TO-127 package, which has excellent mechanical stability, thermal stability, and electrical insulation. Its collector-base and collector-emitter junctions allow for current gains and the transistor’s excellent gain, low noise performance and high frequency stability makes it ideal for RF signal conditioning and amplification applications. The 2SC248000L is also used for RF power amplifiers and its cost-effectiveness makes it popular amongst radio frequency engineers and power amplifier designers.

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