2SC4082T106P Allicdata Electronics
Allicdata Part #:

2SC4082T106PTR-ND

Manufacturer Part#:

2SC4082T106P

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN 20V 0.05A SOT-323
More Detail: Bipolar (BJT) Transistor NPN 20V 50mA 1.5GHz 200mW...
DataSheet: 2SC4082T106P datasheet2SC4082T106P Datasheet/PDF
Quantity: 1000
1 +: $ 0.07000
10 +: $ 0.06790
100 +: $ 0.06650
1000 +: $ 0.06510
10000 +: $ 0.06300
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 20mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 10mA, 10V
Power - Max: 200mW
Frequency - Transition: 1.5GHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3
Base Part Number: 2SC4082
Description

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2SC4082T106P application field and working principle

A 2SC4082T106P transistor is a type of Bipolar (BJT) Single transistor, and is used for a variety of applications. Since the transistor is a general-purpose device, it can be used for both digital and analog circuit design. In terms of application field, some of the main uses of a 2SC4082T106P include: powering linear and digital circuits, providing amplification and switching, small signal and high power switching, and controlling solenoids, relays, and motors.

The 2SC4082T106P transistor is a general-purpose NPN type, which utilizes an emitter-base-collector element configuration. The emitter is the "input" of the transistor; the base is the controlling element between the emitter and the collector, the "output"; and the collector is the terminal where the load or output current is connected. The current flow through the transistor is controlled by the current at the base terminal, which further determines the amount of current that can flow from the collector to the emitter.

The 2SC4082T106P transistor also includes some other features, such as breakdown voltage, collector-base breakdown voltage, total power dissipation, and so on. These characteristics are essential for any design engineer to understand in order to properly select the correct transistor for their needs.

In order to understand the working principle of a 2SC4082T106P transistor, one must first understand the concept of a reverse-biased junction. This junction is formed between the collector and the base of the device. When a bias voltage is applied to this junction, the current that passes through the device is typically much lower than the amount of current that passes through the emitter-base junction. This means that when a signal is applied to the base, the device can either act as an amplifier, or it can act as a switch, controlling current flow to the collector.

The main advantage of using the 2SC4082T106P transistor is that it is relatively easy to integrate into circuits, due to its simple three-terminal configuration. In addition, the transistor is able to handle large currents and voltages without suffering from breakdown or damage. Furthermore, the device is able to handle multiple frequencies, making it suitable for a wide range of applications.

In conclusion, the 2SC4082T106P transistor is a general-purpose NPN type given its wide variety of application fields and its high durability over time. It is important to emphasize, however, that for any given application, the device must be correctly selected and correctly integrated into the circuit so as to provide the most advantageous result.

The specific data is subject to PDF, and the above content is for reference

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