2SC4536-AZ

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2SC4536-AZ is an epitaxial planar type NPN Bipolar Junction Transistor (BJT), specifically designed for use in RF applications. It has a high current to power gain (hfe) ratio and is suitable for low-noise amplification, oscillation, and switching of RF signals. The 2SC4536-AZ has a power dissipation (PD) of up to 100W, allowing it to operate at higher temperatures than standard transistors. Additionally, it has an excellent thermal resistance and can withstand high-frequency interference in high-temperature environments.

This transistor is designed for use in radio-frequency (RF) applications, such as those used in radio transmitters and receivers, cellular phones, wireless networks, satellite receivers and transmitters, and television receiver applications. The 2SC4536-AZ is also suitable for use in low frequency switching, such as in security equipment, electronic ballasts, or motor control.

The 2SC4536-AZ works on the principle of bipolar junction transistor (BJT), which is a three-terminal device consisting of two p-type semiconductor layers, called emitter and collector, sandwiching a n-type layer called base. The emitter-base junction is forward biased (allows flow of electrons), and the collector-base junction is reverse biased (blocks electron flow). The emitter injects electrons into the base region, and these electrons are then collected by the collector. This process forms the basis of the BJT operation.

When a current is applied to the base of the 2SC4536-AZ, the electron density in the base region increases. This increase in electron density creates a field in the collector-base junction that inverts the majority carriers from p-type to n-type, facilitating a larger current flow from the collector to the emitter, or from the emitter to the collector, depending on the type of transistor. This ability to switch between the two polarities enables the 2SC4536-AZ to be used in RF applications.

The 2SC4536-AZ has a high hfe of 20-500, making it suitable for use in RF amplifiers, oscillators, and switching applications. It has a low collector-to-base capacitance, making it well suited for high frequency applications. It is able to withstand a maximum junction temperature of 200°C and is available in TO-220 and metal packages. Additionally, it is relatively easy to use and has low power dissipation, making it ideal for use in a range of RF applications.

In conclusion, the 2SC4536-AZ is a Bipolar Junction Transistor specifically designed for use in RF applications. It has a high current to power gain ratio and is suitable for use in RF amplifiers, oscillators, and switching applications. It has an excellent thermal resistance and is able to withstand high-temperature environments. Additionally, it is relatively easy to use and has low power dissipation. All of these attributes make 2SC4536-AZ an ideal choice for RF applications.

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