Allicdata Part #: | 2SC4617-ND |
Manufacturer Part#: |
2SC4617 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 50V 0.1A SC75-3 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 100mA 180MHz 125m... |
DataSheet: | 2SC4617 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 60mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 6V |
Power - Max: | 125mW |
Frequency - Transition: | 180MHz |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SC-75, SOT-416 |
Base Part Number: | 2SC4617 |
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.2SC4617 Application Field and Working Principle
The 2SC4617 is a NPN Silicon bipolar transistor manufactured by Toshiba, primarily intended for use in audio amplifiers. It is typically divided into three categories: power BJTs (bipolar junction transistors), low-noise BJTs, and switching BJTs. It is also categorized as a type IIB transistor, with a high saturation current of 250 mA and a collector-emitter saturation voltage of 1.5 volts.
Power BJTs are devices in which the current, voltage, and power all increase from the collector to the emitter. Such transistors are ideal for amplifying signals and medium-power applications. Low-noise BJTs are special transistors designed to reduce noise and distortion in audio amplifiers. The 2SC4617\'s low noise characteristics make it suitable for such applications.
Switching transistors are used to turn on and off AC and DC currents. They are typically used as switches for low-power applications, such as controlling motors and relays. The 2SC4617 has a low collector-emitter saturation voltage and a high collector-emitter leakage current, making it an effective switching device.
The 2SC4617 works by controlling the flow of electrons between the collector and the emitter when a voltage is applied to the base. When the base is connected to ground, the transistor is off, meaning that almost no current can flow between the collector and the emitter. When a voltage is applied to the base, a small amount of electrons are allowed to flow between the collector and the emitter, thereby turning the transistor on. This is known as the biasing of the transistor.
The current then flowing between the collector and the emitter is determined by two parameters: the collector current, and the base current. The higher the collector current, the higher the drain current. The higher the base current, the stronger the current flowing from the collector to the emitter. The strength of the collector current and the base current are limited by the transistor\'s cutoff voltage, which is the applied voltage to the base needed to turn the transistor on.
As with many transistors, understanding the working principles of the 2SC4617 is essential for effective application. Although its high saturation voltage, low noise characteristics, and switching capabilities makes the 2SC4617 ideal for many applications, electronics engineers must understand the details of its working principles to design circuits correctly and efficiently.
The specific data is subject to PDF, and the above content is for reference
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