![2SC4027S-TL-E Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | 2SC4027S-TL-EOSTR-ND |
Manufacturer Part#: |
2SC4027S-TL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 160V 1.5A TP-FA |
More Detail: | Bipolar (BJT) Transistor NPN 160V 1.5A 120MHz 1W S... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 160V |
Vce Saturation (Max) @ Ib, Ic: | 450mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 5V |
Power - Max: | 1W |
Frequency - Transition: | 120MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | 2-TP-FA |
Base Part Number: | 2SC4027 |
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The 2SC4027S-TL-E is classified as a Transistors - Bipolar (BJT) - Single device. It is a double-diffused epitaxial planar type transistor with silicided collector and base electrodes. The device has an NPN bipolar structure and is designed for general purpose switching and amplification applications.
2SC4027S-TL-E is manufactured using a silicon epitaxial NPN planar transistor process that features improved beta and switch time performance. The high-current density and low saturation voltage makes it ideal for switching applications in power supplies and automotive circuits. Its low on-resistance, high breakdown voltage, and wide operating temperature range make it ideal for use in amplification and audio applications.
The 2SC4027S-TL-E has a variety of application fields, including power and audio amplifiers, small signal switches, relay circuits, and high-voltage switching applications. 2SC4027S-TL-E devices are also used in high-frequency applications such as radio frequency amplifiers, satellite modulators, and radio transmitters.
The working principle of the 2SC4027S-TL-E is based on the basic principle of a bipolar transistor. It is an N-type semiconductor with three terminals, the base, collector and emitter which are connected to a load circuit. When a small current flows through the base-emitter junction, it creates a larger current in the collector-base junction, thus controlling the current flow in the load circuit.
The current in the collector-base junction is usually much larger than the base-emitter current to provide high current gain. The base-collector voltage (Vbc) affects the gain and the base resistance (Rb) of the device affects the frequency response. The collector current dependent on the characteristics of the device and it is also dependent on the current flowing through the base.
The 2SC4027S-TL-E has an integrated circuit surface mount package and is available with a standard configuration of 15 pins. The device offers a reliable high-voltage and high-current handling capability and is designed for optimal thermal performance. It has a wide operating temperature range of -55°C to +150°C, making it suitable for a wide range of applications.
The 2SC4027S-TL-E offers improved switching performance, low on-resistance, high breakdown voltage, and high current density making it an ideal choice for power supply, switching and amplification applications. It is suitable for both commercial and automotive applications due to its wide operating temperature range and reliable high-voltage and current handling capability.
The specific data is subject to PDF, and the above content is for reference
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