Allicdata Part #: | 2SC4207-GR(TE85LFTR-ND |
Manufacturer Part#: |
2SC4207-GR(TE85L,F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS 2NPN 50V 0.15A SMV |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) Common... |
DataSheet: | 2SC4207-GR(TE85L,F Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) Common Emitter |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 6V |
Power - Max: | 300mW |
Frequency - Transition: | 80MHz |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-74A, SOT-753 |
Supplier Device Package: | SMV |
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The 2SC4207-GR (TE85L,F) is a dual NPN array semiconductor device that exhibits high voltage, high speed, and high current. As part of the Transistors – Bipolar (BJT) – Arrays family of products, it can be used for a variety of applications. This product has been proven reliable for operation in numerous electronic products.
The device has a collector−emitter breakdown voltage rating of greater than 60 V and a maximum emitter—base voltage of 8V. It has a maximum collector current rating of up to 30A and is capable of providing a wide output range of up to 400mA with a high collector-emitter breakdown voltage of at least 100V.
The device is well suited for use in applications that require high-speed switching and high-current carry capability. It can be used for a variety of power amplification applications, linear operation, and switching applications. It can be used for motor control, high-side switches, and other applications requiring high-speed switching.
The working principle of the 2SC4207-GR (TE85L,F) is fairly simple. Its two NPN transistors are connected in a Darlington configuration and a bias voltage is applied between the two transistors. This allows for the two transistors to have their collectors connected with the same polarity and their emitters connected with opposite polarity. This allows current to flow between the bases of the transistors and through the collector–emitter path when the base of one transistor is driven with a larger current than the other transistor.
When the voltage of the collector increases relative to the collector voltage of the other transistor, the transistors switch states, allowing current to flow between the collector and emitter of the transistors. This current flow is proportional to the relative current of the two transistors, allowing for a higher current to be drawn in comparison to a single transistor.
The 2SC4207-GR (TE85L,F) is an excellent option for a variety of power-amplification applications and linear operations. Its high current output, high speed, and high voltage ratings make it ideal for use in these types of applications. It is also capable of being used in switching applications, motor control, and high-side switches thanks to its high-speed switching and high-current capability.
The specific data is subject to PDF, and the above content is for reference
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GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
IC INTEGRATED CIRCUITBipolar (BJT) Trans...