2SC4228-A

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2SC4228-A is a HFY transistor developed by NEC Electronics Corporation for use in RF applications. This type of transistor is also known as an NPN-collector bipolar junction transistor (BJT) and is a type of three-terminal semiconductor device. It is mainly used in the frequency range from 0.3 to 2.0GHz, or typically in the radios of the 900MHz band. In addition, it is also used in other components like broadband amplifiers, high-frequency amplifiers, RF power amplifiers and mobile phone transmitters.

The transistor’s two main components are the emitter and the collector. The emitter is the positive terminal, which emits electrons when a current applied. It is also connected to the base of the transistor. The collector is the negative terminal, which is connected to the emitter and absorbs electrons that are emitted from the emitter. These electrons travel through the base of the transistor, allowing the current to flow from the emitter to the collector. There are also two additional pins, the gate and the base, which control the flow of electrons.

The 2SC4228-A has a low current transition and a maximum transition frequency of 500MHz. Its doping profile is symmetric and the transistor exhibits excellent noise characteristics. The transistor also has a wide range of input voltage ratings for DC/DC converters, allowing for a range of high frequency circuit applications.

The transistor has a gain of up to 40dB, which allows it to be used in applications that require high gain and power handling. The device also exhibits a good input/output return loss, making it suitable for RF applications. It has a very high maximum output power and allows for high speed switching. This allows the transistor to be used in applications that require high speed and high power.

The 2SC4228-A is a reliable, low noise option for RF applications. Its wide range of input voltage ratings make it suitable for DC/DC converters and its high gain makes it suitable for high gain, high power applications. Its high maximum output power and switching speed allow for a variety of applications. The transistor’s low current transition and wide range of input voltage ratings make it the perfect choice for any application requiring high gain, low noise and high power.

The specific data is subject to PDF, and the above content is for reference