Allicdata Part #: | 2SC4536-T1-AZTR-ND |
Manufacturer Part#: |
2SC4536-T1-AZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | RF TRANSISTOR NPN SOT-89 |
More Detail: | RF Transistor NPN 15V 250mA 5.5GHz 2W Surface Moun... |
DataSheet: | 2SC4536-T1-AZ Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 5.5GHz |
Noise Figure (dB Typ @ f): | 2dB @ 1GHz |
Gain: | 7dB |
Power - Max: | 2W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 50mA, 10V |
Current - Collector (Ic) (Max): | 250mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89 |
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A 2SC4536-T1-AZ is a high-frequency PNP silicon epitaxial transistor. It is usually used in low-noise, small-signal RF amplifiers and gain application circuits. This type of transistor offers high linearity and superior performance in a wide range of applications, such as automotive, consumer electronic products, and communications devices.
The transistor can be used to amplify signal up to 900MHz. It features a maximum supply voltage of 24V, a maximum collector-emitter voltage of 12V, and a maximum collector current of 150mA. It also has a maximum of 1.5dB power gain with a power dissipation of 350mW. It is available in the TO-39, the SOT-93, and the SC-65 packages.
2SC4536-T1-AZ’s working principle is based on the bipolar junction transistor. A BJT is made up of three distinct layers of semiconductor. These layers are then joined together at a junction, forming an NPN or PNP transistor.
When current is applied to the base of the NPN transistor, it creates a depletion region between the collector and the emitter. This depletion region causes holes to move from the emitter to the collector, creating a current flow.
In a similar way, when a current is applied to the base of a PNP transistor, it creates an enhancement region between the collector and the emitter. This enhancement region causes electrons to move from the collector to the emitter, creating a current flow.
This type of transistor has a wide range of applications in various electronic circuits. It is commonly used in Audio amplifies, radio transmitters, low noise amplifies, modulators, phase and frequency detectors, communication systems, and even medical imaging systems.
In summary, 2SC4536-T1-AZ is a high-frequency PNP silicon epitaxial transistor. It is used for low-noise and small-signal RF amplifiers and gain application circuits and offers excellent linearity at 900 MHz frequencies. It is available in several packages, including the TO-39, the SOT-93, and the SC-65. Its working principle is based on the bipolar junction transistor, which has a wide range of applications in various electronic circuits.
The specific data is subject to PDF, and the above content is for reference
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