Allicdata Part #: | 2SC4228-T1-ATR-ND |
Manufacturer Part#: |
2SC4228-T1-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | RF TRANSISTOR NPN SOT-323 |
More Detail: | RF Transistor NPN 10V 35mA 8GHz 150mW Surface Moun... |
DataSheet: | 2SC4228-T1-A Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 10V |
Frequency - Transition: | 8GHz |
Noise Figure (dB Typ @ f): | 1.9dB @ 2GHz |
Gain: | 7.5dB |
Power - Max: | 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 5mA, 3V |
Current - Collector (Ic) (Max): | 35mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
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2SC4228-T1-A is a NPN bipolar transistor has a powerful gain of up to 100MHz and a high-current capacity of 10A. It has a high HF-cutoff frequency at 280MHz and a low thermal resistance junction Ts-D of 70C. It is designed for RF applications such as RF amplifiers.
2SC4228-T1-A is designed for use in amplification, mixers, oscillators, modulators and a variety of other RF applications. It is an NPN transistor that is characterized by a high current capacity, great gain, and low noise. Its low thermal resistance junction Ts-D of 70C makes it suitable for use in high frequency applications, such as high-speed RF amplifiers.
2SC4228-T1-A has a wide range of features, making it suitable for use in a variety of applications. It has a high-current capacity of 10A, a high-frequency cutoff of 280 MHz and excellent gain linearity for amplifying wideband signals. The device also has a low thermal resistance junction Ts-D of 70C, making it suitable for high operating temperatures.
The working principle of 2SC4228-T1-A is relatively straightforward. It employs two collector, base and emitter junctions, which all behave independently and vary depending on applied voltage. The voltage applied to the base determines the amount of current flowing into the emitter-collector junctions, and the resulting output current is determined by the gain of the device. As the current flowing out of the emitter-collector junction changes, it creates a voltage difference between the base and emitter terminals, which helps regulate current levels.
2SC4228-T1-A is a versatile transistor that can be used in various RF and power applications. It has a powerful gain of up to 100MHz, a high-current capacity of 10A, and a high-frequency cutoff of 280 MHz. Its low thermal resistance junction Ts-D of 70C makes it suitable for use in high frequency applications, such as high-speed RF amplifiers.The working principle of 2SC4228-T1-A is relatively straightforward and is based on the application of a voltage across the base and emitter junctions to create a current flowing out of the emitter-collector junction. This current is then used to determine the output current of the device based on its gain. This makes 2SC4228-T1-A an ideal choice for RF and power applications.
The specific data is subject to PDF, and the above content is for reference
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