Allicdata Part #: | 2SC4617T1-ND |
Manufacturer Part#: |
2SC4617T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 50V 0.1A SC75-3 |
More Detail: | Bipolar (BJT) Transistor NPN 50V 100mA 180MHz 125m... |
DataSheet: | 2SC4617T1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 60mA |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 6V |
Power - Max: | 125mW |
Frequency - Transition: | 180MHz |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SC-75, SOT-416 |
Base Part Number: | 2SC4617 |
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The 2SC4617T1 is a single, bipolar junction transistor (BJT) used in a variety of applications. It is a commonly used high-speed switching device due to its small size and high current capability. The 2SC4617T1 is available in both standard and under-packed versions and it has an excellent price-performance ratio.
This bipolar NPN transistor is designed and manufactured using low power process. It is a low voltage and low current device that is suitable for low power and high frequency applications, such as amplifier stages and switching applications. It is also used in audio and video circuits.
The 2SC4617T1 is a NPN transistor, which means that it is made up of two p-type and one n-type semiconductor regions. A forward biasing of the transistor\'s base-emitter junction causes current to flow between the collector and emitter terminals, thereby controlling the current flow through the device. The transistor\'s current gain falls off as the current increases and is generally defined by the ratio of the collector current to the base current. In order to reduce power dissipation and increase transistor gain, the device\'s collector-base junction is made reverse biased. This can also help in reducing noise and increasing the minimum switching time.
For medium power applications, the 2SC4617T1 has a maximum collector-emitter voltage of 80 V, a maximum collector-base voltage of 80 V, and a maximum power dissipation of 1 watt. The transistor can also operate at high frequencies, with a maximum frequency of 10 MHz, and is a preferred device for amplifier and switching applications.
The device is also designed to operate at low voltages, with a breakdown voltage of 5 V and a maximum voltage of 35 V. This low voltage capability makes the device suitable for low voltage and low current applications, such as the drive circuits of portable electronics devices. Furthermore, it has an attractive maximum current rating of 1 A and can provide excellent latch-up immunity.
The 2SC4617T1 has a wide range of applications, including high frequency amplifiers, analog and digital circuits, audio and video circuits, switching and control devices. Furthermore, it can be used in high-power applications such as power amplifiers and RF circuits. Its low voltage and high current capability makes it ideal for automotive applications, such as power window motors, ignition systems, and battery charging circuits.
In summary, the 2SC4617T1 is a single, bipolar junction transistor (BJT) used for a variety of applications. It is an ideal choice for low voltage and low power applications due to its low voltage and current ratings, high frequency capability, and excellent latch-up immunity. It has a wide range of applications, including high frequency amplifiers, analog and digital circuits, audio and video circuits, switching and control devices, and automotive applications. It is available in both standard and under-packed versions, making it a cost-effective solution for the various applications.
The specific data is subject to PDF, and the above content is for reference
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