2SC4617EBTLR Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
Transistor Type:	NPN
Current - Collector (Ic) (Max):	150mA
Voltage - Collector Emitter Breakdown (Max):	50V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	120 @ 1mA, 6V
Power - Max:	150mW
Frequency - Transition:	180MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-89, SOT-490
Supplier Device Package:	EMT3F (SOT-416FL)
Base Part Number:	2SC4617

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Introduction to 2SC4617EBTLR

The 2SC4617EBTLR is a bipolar transistor designed for high-speed switching applications. It is offered in two packages, a surface-mount SO-8 package, and a through-hole TO-220 package. The 2SC4617EBTLR was developed for higher frequency applications such as TV or radio power supply switching, automotive circuits, and industrial electronics, and it can also be used as a high-gain amplifier. This particular version of the 2SC4617EBTLR is capable of up to a 100V drain-source voltage and up to a 6A drain current.

2SC4617EBTLR Application Field and Working Principle

The 2SC4617EBTLR is a widely used power transistor for a variety of applications. Its primary application is that of a high-speed switch, allowing the user to rapidly turn a load on and off. The design and construction of the 2SC4617EBTLR makes it well-suited for these types of applications. It is constructed with three layers of NPN epitaxial silicon, where each layer functions as either base, emitter, or collector.At the heart of the 2SC4617EBTLR is a process called "doping,"which involves the introduction of impurities into the silicon crystal lattice of a transistor in order to produce electrical charge carriers.The presence of impurities in the silicon creates a region of diffusion, which functions as a potential barrier. The potential barrier creates holes, or electrons, which are charge carriers.The size of the potential barrier can be adjusted by a process called "biasing,"which can either increase or decrease the current through the transistor.In the 2SC4617EBTLR, the doping process creates two layers: a lightly doped collector and a heavily doped base. The heavily doped base reduces the voltage requirement at the base, allowing the transistor to be operated at lower voltages. The lightly doped collector increases the current gain of the transistor and allows it to operate at higher currents.When a small voltage is applied to the base, it allows current to flow between the base and collector. The current flowing through the base of the transistor produces a magnetic field, which affects the potential barrier between the collector and the base. This potential barrier changes the current flow from the collector to the base, allowing the current to flow from the collector to the drain. The drain is connected to an external load, and the transistor will turn on and off depending on the voltage applied to the base. This process allows the transistor to be used as a switch, quickly toggling the current between the collector and the drain.In conclusion, the 2SC4617EBTLR is a quality transistor designed for high-speed switching applications. It is designed with two layers of NPN epitaxial silicon doped to different levels, which allows it to operate at lower voltages with increased current gain. It is highly reliable, has low power dissipation, and can be used in a variety of electronic circuits.

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