Allicdata Part #: | 2SC4227-T1-ATR-ND |
Manufacturer Part#: |
2SC4227-T1-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | RF TRANSISTOR NPN SOT-323 |
More Detail: | RF Transistor NPN 10V 65mA 7GHz 150mW Surface Moun... |
DataSheet: | 2SC4227-T1-A Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 10V |
Frequency - Transition: | 7GHz |
Noise Figure (dB Typ @ f): | 1.4dB @ 1GHz |
Gain: | 12dB |
Power - Max: | 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 7mA, 3V |
Current - Collector (Ic) (Max): | 65mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
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2SC4227-T1-A is a bipolar junction transistor (BJT) in the RF field. It\'s commonly used in the radio frequency power amplifier applications, typically operating in the 100MHz to 3GHz range. The BJT is equipped with excellent high-frequency characteristics, and also provides superior noise reduction characteristics, which make it ideal for use in high-frequency applications.
The 2SC4227-T1-A is rated at 50 watts output power at VHF and 200 watts output power at UHF. It features a collector cutoff voltage of 3 volts, a collector-emitter breakdown voltage of 5 volts, and a maximum collector current of 4 amperes. The collector supply voltage is 40V. The junction temperature is maximum 175°C.
A BJT such as the 2SC4227-T1-A works by creating an electrical current in the form of electrons to flow from the emitter to the collector. Depending on the current in the base, the transistor will be either in the on or off state. When the transistor is in the on state, there is a current between the collector and the emitter. When the transistor is in the off state, there is no current between the collector and the emitter.
The current available to the collector turns on the transistor. When the incurrent is removed, the transistor will turn off. This is how the BJT creates a variable current flow by modulating the voltage in the base. In the case of the 2SC4227-T1-A, the base current can be modulated using a RF signal, allowing for the creation of multiple frequencies in the output.
In addition to the on and off states, the BJT also features a saturation state. This state occurs when the collector current is essentially fully conducting, meaning that almost no voltage is required to keep the current flowing. To understand this concept, imagine that the collector and emitter are essentially shorted. In this state, the transistor will be in the most efficient mode.
The 2SC4227-T1-A is specifically designed for use in radio frequency power amplifier applications, offering excellent high-frequency characteristics and superior noise reduction features. Its collector cutoff voltage and collector-emitter breakdown voltage are very low, and it is equipped with a maximum collector current of 4 amperes. Furthermore, its maximum junction temperature of 175°C ensures that it won\'t be damaged by heat.
Overall, the 2SC4227-T1-A is an excellent choice for radio frequency power amplifier applications, providing reliable performance and excellent high-frequency characteristics. It offers superior noise reduction, a low collector cutoff voltage, and a low collector-emitter breakdown voltage. Plus, its maximum collector current and maximum junction temperature are more than adequate for most applications.
The specific data is subject to PDF, and the above content is for reference
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