2SC4617G

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The 2SC4617G transistor is a PNP epitaxial planar silicon transistor. It belongs to the category of single bipolar transistors (BJT). This transistor is well-suited for the amplification and switching of signals in integrated circuits. It is designed to work in high-speed switching applications and is characterized by good current gain, fast switching time and low noise.

The 2SC4617G features a maximum collector current rating of 900 mA, a maximum collector-emitter voltage of 150 V, a minimum power dissipation of 1 Watt, and a VCE(sus) of 3.0 V. Its typical current gain (hFE) ranges from 20 to 80. It features a 175°C maximum junction temperature. It is housed in a TO-126 package.

The working principle of the 2SC4617G consists of three operation modes for different operations. The three operation modes are; Activation, Cutoff, and Saturation. In Activation mode, the transistor acts as a switch with low resistance in the emitter-base junction. When the voltage on the base-emitter junction reaches the breakdown voltage, the current begins to flow as electrons move from the emitter to the collector while the current gains increases. The second operation mode is the Cutoff mode, where no direct current flows between the emitter and collector. The last operation mode, Saturation, is where the current gain is at its high peak, and the base-emitter junction is in the On state with no voltage drop. The maximum current flow is proportional to the power supplied.

The 2SC4617G is mainly used for amplification and switching of signals. It is ideal for high-frequency low-noise amplifiers, as well as for general purpose switching applications such as automotive electronics and industrial switching applications. It is also often used in audio amplifiers and PA systems, as well as in RF applications like RF amplifiers, Oscillators and Pulse Generators.

The 2SC4617G’s excellent characteristics include excellent ESD protection, low noise, and high switching speed. It is also easy to use and can be used in a variety of applications thanks to its wide operating temperature range of -40°C to +150°C.

In summary, the 2SC4617G is a PNP epitaxial planar silicon transistor which is suitable for high frequency and low noise amplification, as well as for general purpose switching. It features a maximum collector current rating of 900 mA, a maximum collector-emitter voltage of 150 V, a minimum power dissipation of 1 Watt and a VCE(sus) of 3.0 V. Its typical current gain (hFE) ranges from 20 to 80 and its maximum junction temperature is 175°C. It is easy to use and combines excellent ESD protection, low noise, and high switching speed in a small package.

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