Allicdata Part #: | 2SC4793NSEIKIF(J-ND |
Manufacturer Part#: |
2SC4793,NSEIKIF(J |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS NPN 1A 230V TO220-3 |
More Detail: | Bipolar (BJT) Transistor NPN 230V 1A 100MHz 2W Thr... |
DataSheet: | 2SC4793,NSEIKIF(J Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 230V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 5V |
Power - Max: | 2W |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220NIS |
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The 2SC4793, NSEIKIF (J) is a single bipolar(BJT) transistor, used in applications that involve the electrification of electrical components and circuit pathways. The exceptional characteristics of this device make it a great choice for various applications, as it can be used to guarantee both safe and efficient operations.
The 2SC4793, NSEIKIF (J) is a transistor designed specifically for high frequency power amplifiers. It has a wide operating temperature range, up to +85 degrees Celsius, making it suitable for various applications, including linear amplifiers and amplifier stages. This single transistor is also often used in low-frequency switching circuits, where its power dissipation capabilities and high input conductivity contribute to its performance.
The 2SC4793, NSEIKIF (J) is a general-purpose bipolar transistor. It is used for a variety of purposes, such as inverters, amplifiers, low-frequency switching, current switching and voltage switching. The device is commonly used to convert analog signals into digital signals, with the help of a microprocessor or other digital components. The transistor is also used to provide electrical isolation and signal amplification of signals from one point to another.
The working principle of 2SC4793, NSEIKIF (J) is based on the function of the bipolar junction transistor (BJT). The BJT works by providing an electronic interface between two sections of a circuit, acting as an on-off switch. The base, collector and emitter of this transistor form three distinct sides of the transistor, making up the semiconductor material. When a voltage is applied to the base, it changes the electric field present within the transistor, causing a current to flow between the collector and emitter. This current can then be amplified by providing additional energy to the device, resulting in higher levels of current flow.
The 2SC4793, NSEIKIF (J) is well-suited for use in digital circuits. It is used to switch between high and low logic states, typically with the help of a microcontroller or other external devices. It is also used in amplifier stages, as it allows devices to achieve high signal gains without the need for additional heat dissipation. The transistor provides stable current gain and a low noise level, making it suitable for high-frequency applications.
In summary, the 2SC4793, NSEIKIF (J) is a single bipolar transistor used in a variety of applications. It is suitable for use in amplifier stages and low-frequency switching circuits, providing both safe and efficient operations. The device is capable of switching between high and low logic states, providing stable current gains and low noise levels. Its exceptional characteristics make it a great choice for any application where fast and accurate switching is required.
The specific data is subject to PDF, and the above content is for reference
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