2SC4682,T6CSF(J Allicdata Electronics
Allicdata Part #:

2SC4682T6CSF(J-ND

Manufacturer Part#:

2SC4682,T6CSF(J

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS NPN 3A 15V TO226-3
More Detail: Bipolar (BJT) Transistor NPN 15V 3A 150MHz 900mW T...
DataSheet: 2SC4682,T6CSF(J datasheet2SC4682,T6CSF(J Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 15V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V
Power - Max: 900mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD
Description

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The 2SC4682T6CSF(J) is a transistor specifically designed for use in various applications. It is a bipolar junction transistor (BJT) and is categorized as a single transistor. It is most commonly used in amplifying or switching applications.

It is ideal for applications that require low collector-emitter saturation voltage and high current gain. Some typical applications that the 2SC4682T6CSF(J) are well-suited for include amplifiers, switching circuits, relay drivers, small signal transistors, and oscillator transistors. The 2SC4682T6CSF(J) is also useful in high frequency applications that require low noise as well as high gain.

The 2SC4682T6CSF(J) has an overload rating of 60 watts. This allows the transistor to be used in a variety of power applications. The power dissipation of the 2SC4682T6CSF(J) is 1.25 watts and the collector-emitter breakdown voltage is 160V. It is also very suitable for high temperature applications due to its high thermal resistance.

The 2SC4682T6CSF(J) is a NPN transistor and is built with a silicon material type. The base-emitter voltage is 2.0 – 2.7V, while the collector-emitter voltage is 3.0 – 3.7V. It has a hFE range of 200 – 450 and a power gain of 80dB. It can operate at frequencies up to 150MHz with a maximum collector current of 10A. The 2SC4682T6CSF(J) also has excellent machanical shock and moisture resistance when used in harsh environments.

The working principle of the 2SC4682T6CSF(J) is based on the NPN transistor configuration. This type of transistor is made up of three layers of semiconductor material. These layers together form a PN-junction. The middle layer is known as the base and connects the two outer layers known as the emitter and collector. When a voltage is applied to the base, it makes a connection between the emitter and collector. This creates a current flow which is the working principle of the transistor.

The 2SC4682T6CSF(J) can be used in both amplifying and switching applications in a variety of circuits. Its low noise, low saturation voltage, and high current gain makes it an ideal choice for these types of circuits. It is also designed to withstand high temperature and high power conditions so it can be used in a variety of applications. The 2SC4682T6CSF(J) is an important transistor with many uses, making it an essential component in many electronic applications.

The specific data is subject to PDF, and the above content is for reference

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