| Allicdata Part #: | 2SC4960-ND |
| Manufacturer Part#: |
2SC4960 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Panasonic Electronic Components |
| Short Description: | TRANS NPN 800V 1A TOP-3F |
| More Detail: | Bipolar (BJT) Transistor NPN 800V 1A 4MHz 3W Throu... |
| DataSheet: | 2SC4960 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 1A |
| Voltage - Collector Emitter Breakdown (Max): | 800V |
| Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 40mA, 200mA |
| Current - Collector Cutoff (Max): | 50µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 3 @ 500mA, 5V |
| Power - Max: | 3W |
| Frequency - Transition: | 4MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TOP-3F |
| Supplier Device Package: | TOP-3F-A1 |
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2SC4960 is a NPNEpitaxial type transistor. It\'s mainly used as an amplifier, switching, and other applications with a range of low- to high-power supplies. It is commonly used in audio and industrial applications. The primary benefit of the 2SC4960is its low power consumption and good linearity, which make it well-suited for high-power amplifiers. However, its use can be limited in high-speed switching applications due to its low breakdown voltage.
The 2SC4960 is a bipolar junction transistor (BJT), which is comprised of three layers of semiconductor material to form a PN junction. The N-type semiconductors are the emitter and collector, while the P-type semiconductor is the base. The base-emitter junction is forward-biased, while the base-collector junction is reversed-biased. When current is applied to the base, it becomes amplified in the collector. The gain of the transistor is measured by the current gain, or hFE, typically in the range of 30-150.
When an electrical signal is applied to the base, electronic current gain is created. The current gain is defined by the ratio of the output current to the input current. Generally speaking, the BJT configuration can provide higher current gain than the field-effect transistor (FET). Moreover, the BJT has greater linearity, that is, the output voltage is linearly related to the input voltage. This linearity is particularly useful when designing amplifiers with a wide range of input signals.
When an electrical signal is applied to an amplifier, the signal is amplified by a process known as biasing. In order for the biasing process to occur, two bias voltages need to be applied to the transistor: one to the base and one to the collector. The base voltage controls the collector current, and the collector voltage controls the collector-emitter voltage. Depending on the circuit design and device parameters, the bias voltages can be positive or negative. This type of biasing configuration is known as self-bias.
The 2SC4960 is a popular choice for low- to medium-power circuits, such as audio amplifiers, where its low power consumption, linearity, and wide range of current gains make it a very useful device. It is also used in triggering circuits, where its fast switching time and low saturation voltage make it ideal. Furthermore, the 2SC4960 is compatible with many of the microprocessor systems commonly used in industrial and automotive applications.
In summary, 2SC4960 is a popular NPNEpitaxial type transistor with various applications. It offers good linearity and low power consumption, making it ideal for high-power amplifiers, triggering circuits, and other low- to medium-power applications. It is compatible with microprocessors, and its fast switching time and low saturation voltage also make it beneficial for many industrial and automotive uses.
The specific data is subject to PDF, and the above content is for reference
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2SC4960 Datasheet/PDF